SKB02N120

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-263-3


Features:

• 40lower Eoff compared to previous generation
• Short circuit withstand time 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/


Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	1200	V
DC collector current TC = 25°C TC = 100°C	IC	6.2 2.8	A
Pulsed collector current, tp limited by Tjmax	ICpuls	9.6	A
Turn off safe operating area VCE 600V, Tj 150°C	-	9.6	A
Diode forward current TC = 25°C TC = 100°C	IF	4.5 2	A
Diode pulsed current, tp limited by Tjmax	IFpuls	9	A
Gate-emitter voltage	VGE	±20	V
Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150°C	tSC	10	µs
Power dissipation TC = 25°C	Ptot	62	W
Soldering temperature, 1.6mm (0.063 in.) from case for 10s	-	260	Nm
Operating junction and storage temperature	Tj , Tstg	-55to+150	°C

Description

The information herein SKB02N120 is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, SKB02N120 including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer.