SKB02N60, SKB04N60, SKB06N60 Selling Leads, Datasheet
MFG:INFINEON Package Cooled:P-TO263-3-2 D/C:2008+
SKB02N60, SKB04N60, SKB06N60 Datasheet download
Part Number: SKB02N60
MFG: INFINEON
Package Cooled: P-TO263-3-2
D/C: 2008+
SKB02N60, SKB04N60, SKB06N60
- Table of contents:
Info of SKB02N60
Info of SKB04N60
Info of SKB06N60
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About SKB02N60
PDF/DataSheet Download
Datasheet: SKB02N60
File Size: 406689 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
About SKB04N60
PDF/DataSheet Download
Datasheet: SKB04N60
File Size: 404096 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
About SKB06N60
PDF/DataSheet Download
Datasheet: SKB06N60
File Size: 282935 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
SKB02N60 General Description
The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer.
SKB02N60 Maximum Ratings
| Parameter |
Symbol |
Value
|
Unit |
| Collector-emitter voltage |
VCE |
600 |
V |
| DC collector current TC = 25°C TC = 100°C |
IC |
6.0 2.9 |
A |
| Pulsed collector current, tp limited by Tjmax |
ICpuls |
12 |
A |
| Turn off safe operating area VCE 600V, Tj 150°C |
- |
12 |
A |
| Diode forward current TC = 25°C TC = 100°C |
IF |
6.0 2.9 |
A |
| Diode pulsed current, tp limited by Tjmax |
IFpuls |
12 |
A |
| Gate-emitter voltage |
VGE |
±20 |
V |
| Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150°C |
tSC |
10 |
µs |
| Power dissipation TC = 25°C |
Ptot |
30 |
W |
| Operating junction and storage temperature |
Tj , Tstg |
-55to+150 |
°C |
SKB02N60 Features
• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Complete product spectrum and PSpice Models : http://www.infineon.com
• Short circuit withstand time 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Complete product spectrum and PSpice Models : http://www.infineon.com
SKB04N60 General Description
The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer.
SKB04N60 Maximum Ratings
| Parameter |
Symbol |
Value
|
Unit |
| Collector-emitter voltage |
VCE |
600 |
V |
| DC collector current TC = 25°C TC = 100°C |
IC |
9.4 4.9 |
A |
| Pulsed collector current, tp limited by Tjmax |
ICpuls |
19 |
A |
| Turn off safe operating area VCE 600V, Tj 150°C |
- |
19 |
A |
| Diode forward current TC = 25°C TC = 100°C |
IF |
10 4 |
A |
| Diode pulsed current, tp limited by Tjmax |
IFpuls |
19 |
A |
| Gate-emitter voltage |
VGE |
±20 |
V |
| Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150°C |
tSC |
10 |
µs |
| Power dissipation TC = 25°C |
Ptot |
50 |
W |
| Operating junction and storage temperature |
Tj , Tstg |
-55to+150 |
°C |
SKB04N60 Features
• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Complete product spectrum and PSpice Models : http://www.infineon.com
• Short circuit withstand time 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Complete product spectrum and PSpice Models : http://www.infineon.com
SKB06N60 Maximum Ratings
|
Parameter |
Symbol |
Value |
Units |
|
Collector-emitter voltage |
VCE |
600 |
V |
|
DC collector current |
IC |
12 |
A |
|
Pulsed collector current, tp limited by Tjmax |
ICpuls |
24 | |
|
Turn off safe operating area |
- |
24 | |
|
Diode forward current |
IF |
12 | |
|
Diode pulsed current, tp limited by Tjmax |
IFpuls |
24 | |
|
Gate-emitter voltage |
VGE |
±20 |
V |
|
Short circuit withstand time1) |
tSC |
10 |
µs |
|
Power dissipation |
Ptot |
68 |
W |
|
Operating junction and storage temperature |
Tj , Tstg |
-55...+150 |
°C |
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