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SKB02N60, SKB04N60, SKB06N60

Table of contents:
Info of SKB02N60
Info of SKB04N60
Info of SKB06N60

SKB02N60, SKB04N60, SKB06N60 Selling Leads, Datasheet

MFG:INFINEON Package Cooled:P-TO263-3-2 D/C:2008+

SKB02N60, SKB04N60, SKB06N60 Datasheet download

Five Points

Part Number: SKB02N60

MFG: INFINEON

Package Cooled: P-TO263-3-2

D/C: 2008+

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SKB02N60 General Description

The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer.

SKB02N60 Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	600	V
DC collector current TC = 25°C TC = 100°C	IC	6.0 2.9	A
Pulsed collector current, tp limited by Tjmax	ICpuls	12	A
Turn off safe operating area VCE 600V, Tj 150°C	-	12	A
Diode forward current TC = 25°C TC = 100°C	IF	6.0 2.9	A
Diode pulsed current, tp limited by Tjmax	IFpuls	12	A
Gate-emitter voltage	VGE	±20	V
Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150°C	tSC	10	µs
Power dissipation TC = 25°C	Ptot	30	W
Operating junction and storage temperature	Tj , Tstg	-55to+150	°C

SKB02N60 Features

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Complete product spectrum and PSpice Models : http://www.infineon.com

SKB04N60 General Description

SKB04N60 Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	600	V
DC collector current TC = 25°C TC = 100°C	IC	9.4 4.9	A
Pulsed collector current, tp limited by Tjmax	ICpuls	19	A
Turn off safe operating area VCE 600V, Tj 150°C	-	19	A
Diode forward current TC = 25°C TC = 100°C	IF	10 4	A
Diode pulsed current, tp limited by Tjmax	IFpuls	19	A
Gate-emitter voltage	VGE	±20	V
Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150°C	tSC	10	µs
Power dissipation TC = 25°C	Ptot	50	W
Operating junction and storage temperature	Tj , Tstg	-55to+150	°C

SKB04N60 Features

SKB06N60 Maximum Ratings

Parameter	Symbol	Value	Units
Collector-emitter voltage	V_CE	600	V
DC collector current T_C= 25°C T_C = 100°C	I_C	12 6.9	A
Pulsed collector current, tp limited by Tjmax	I_Cpuls	24
Turn off safe operating area V_CE 600V, T_j 150°C	-	24
Diode forward current T_C= 25°C T_C= 100°C	I_F	12 6
Diode pulsed current, tp limited by Tjmax	I_Fpuls	24
Gate-emitter voltage	V_GE	±20	V
Short circuit withstand time1) V_GE= 15V, V_CC 600V, Tj 150°C	t_SC	10	µs
Power dissipation T = 25°C	P_tot	68	W
Operating junction and storage temperature	T_j, T_stg	-55...+150	°C

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