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SI7880DP, SI7882DP, SI7882DP-T1

Table of contents:
Info of SI7880DP
Info of SI7882DP
Info of SI7882DP-T1

SI7880DP, SI7882DP, SI7882DP-T1 Selling Leads, Datasheet

MFG:VISHAY Package Cooled:QFN-8 D/C:06+

SI7880DP, SI7882DP, SI7882DP-T1 Datasheet download

Five Points

Part Number: SI7880DP

MFG: VISHAY

Package Cooled: QFN-8

D/C: 06+

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SI7880DP Maximum Ratings

Parameter		Symbol	5 secs	Steady State	Unit
Drain-Source Voltage		V_DS	30		V
Gate-Source Voltage		V_GS	±20
Continuous Drain Current(TJ= 150 )^a	T_A= 25	I_D	29	18	A
	T_A= 70		25	14
Pulsed Drain Current (10s Pulse Width)		IDM	20
Continuous Source Current (Diode Conduction)^a		I_S	4.5	1.6
Maximum Power Dissipationa	T_A= 25	P_D	5.4	1.9	W
	T_A= 70		3.4	1.2
Operating Junction and Storage Temperature Range		T_J, T_stg	−55 to 150

SI7880DP Features

TrenchFET^®Power MOSFET
PWM Optimized
New Low Thermal Resistance PowerPAK ^TM Package with
Low 1.07-mm Profile

SI7880DP Typical Application

DC/DC Converters
Low-Side MOSFET in Synchronous Buck in Desktops
Secondary Synchronous Rectifier

SI7882DP Maximum Ratings

Parameter		Symbol	10 secs	Steady State	Unit
Drain-Source Voltage		V_DS	12		V
Gate-Source Voltage		V_GS	±8
Continuous Drain Current (T_J = 150)^a	T_A= 25	I_D	22	13	A
	T_A = 70		18	11
Pulsed Drain Current		I_DM	50
Continuous Source Current (Diode Conduction)^a		I_S	4.1	1.6
Maximum Power Dissipation^a	T_A = 25	P_D	5	1.9	W
	T_A= 70		3.2	1.2
Operating Junction and Storage Temperature Range		T_J, T_stg	-55 to 150		/W

SI7882DP Features

· TrenchFET^® Power MOSFET
· New Low Thermal Resistance PowerPAK^TM
Package with Low 1.07-mm Profile
· PWM Optimized for High Efficiency

SI7882DP Typical Application

· Point-of-Load Synchronous Rectifier
- 5-V or 3.3-V BUS Step Down
- Qg Optimized for 500-kHz Operation
· Synchronous Buck, Shoot-Thru Resistant

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