MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:08+
SGW20N60RUF, SGW23N60UF, SGW23N60UFDTM Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: N/A
D/C: 08+
Description: IGBT W/DIODE 600V 12A D2PAK
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PDF/DataSheet Download
Datasheet: SGW20N60RUF
File Size: 551932 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SGW23N60UF
File Size: 543816 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SGW02N120
File Size: 318230 KB
Manufacturer: Infineon Technologies AG
Download : Click here to Download
Fairchild's RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
| Symbol | Description | SGH15N60RUF | Units |
| VCES | Collector-Emitter Voltage | 600 | V |
| VGES | Gate-Emitter Voltage | ±20 | V |
| IC | Collector Current @ TC = 25 | 32 | A |
| Collector Current @ TC = 100 | 20 | A | |
| I CM(1) | Pulsed Collector Current | 60 | A |
| TSC | Short Circuit Withstand Time @ TC = 100°C | 10 | us |
| PD | Maximum Power Dissipation @ TC = 25 | 195 | W |
| Maximum Power Dissipation @ TC = 100 | 75 | W | |
| TJ | Operating Junction Temperature | -55 to +150 | |
| Tstg | Storage Temperature Range | -55 to +150 | |
| TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching isa required feature.
| Symbol | Description | SGH15N60RUF | Units |
| VCES | Collector-Emitter Voltage | 600 | V |
| VGES | Gate-Emitter Voltage | ±20 | V |
| IC | Collector Current................ @ TC = 25 | 23 | A |
| Collector Current ............... @ TC = 100 | 12 | A | |
| I CM(1) | Pulsed Collector Current | 92 | A |
| PD | Maximum Power Dissipation .........@ TC = 25 | 100 | W |
| Maximum Power Dissipation ........@ TC = 100 | 40 | W | |
| TJ | Operating Junction Temperature | -55 to +150 | |
| Tstg | Storage Temperature Range | -55 to +150 | |
| TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
| Technical/Catalog Information | SGW23N60UFDTM |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Input Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 12A |
| Vce(on) (Max) @ Vge, Ic | - |
| Power - Max | - |
| Mounting Type | Surface Mount |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SGW23N60UFDTM SGW23N60UFDTM |
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