SGW10N60RUFD

Features:

• Short circuit rated 10us @ T_C = 100°C, V_GE = 15V
• High speed switching
• Low saturation voltage : V _CE(sat) = 2.2 V @ I_C = 10A
• High input impedance
• CO-PAK, IGBT with FRD : t_rr = 42ns (typ.)


Application

AC & DC motor controls, general purpose inverters, robotics, and servo controls.


Specifications

Symbol	Description	SGH15N60RUF	Units
VCES	Collector-Emitter Voltage	600	V
VCzES	Gate-Emitter Voltage	±20	V
IC	Collector Current................ @ TC = 25	16	A
	Collector Current ............... @ TC = 100	10	A
I CM(1)	Pulsed Collector Current	30	A
IF	Diode Continuous Forward Current @ TC = 100	12	A
IFM	Diode Maximum Forward Current	92	A
TSC	Short Circuit Withstand Time ....@ TC = 100	10	us
PD	Maximum Power Dissipation .........@ TC = 25	75	W
	Maximum Power Dissipation ........@ TC = 100	30	W
TJ	Operating Junction Temperature	-55 to +150
Tstg	Storage Temperature Range	-55 to +150
TL	Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds	300

Description

Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.