SGW13N60RUFD, SGW13N60UF, SGW13N60UFD Selling Leads, Datasheet
MFG:FAIRC Package Cooled:. D/C:06+
SGW13N60RUFD, SGW13N60UF, SGW13N60UFD Datasheet download
Part Number: SGW13N60RUFD
MFG: FAIRC
Package Cooled: .
D/C: 06+
SGW13N60RUFD, SGW13N60UF, SGW13N60UFD
- Table of contents:
Info of SGW13N60RUFD
Info of SGW13N60UF
Info of SGW13N60UFD
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About SGW02N120
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Datasheet: SGW02N120
File Size: 318230 KB
Manufacturer: Infineon Technologies AG
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About SGW13N60UF
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Datasheet: SGW13N60UF
File Size: 549714 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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About SGW13N60UFD
PDF/DataSheet Download
Datasheet: SGW13N60UFD
File Size: 609940 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
SGW13N60UF General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
SGW13N60UF Maximum Ratings
| Symbol | Description | SGH13N60RUF | Units |
| VCES | Collector-Emitter Voltage | 600 | V |
| VGES | Gate-Emitter Voltage | ±20 | V |
| IC | Collector Current................ @ TC = 25 | 13 | A |
| Collector Current ............... @ TC = 100 | 6.5 | A | |
| I CM(1) | Pulsed Collector Current | 52 | A |
| PD | Maximum Power Dissipation .........@ TC = 25 | 60 | W |
| Maximum Power Dissipation ........@ TC = 100 | 25 | W | |
| TJ | Operating Junction Temperature | -55 to +150 | |
| Tstg | Storage Temperature Range | -55 to +150 | |
| TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
SGW13N60UF Features
• High speed switching
• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 6.5A
• High input impedance
• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 6.5A
• High input impedance
SGW13N60UF Typical Application
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
SGW13N60UFD General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
SGW13N60UFD Maximum Ratings
| Symbol | Description | SGH15N60RUF | Units |
| VCES | Collector-Emitter Voltage | 600 | V |
| VGES | Gate-Emitter Voltage | ±20 | V |
| IC | Collector Current................ @ TC = 25 | 13 | A |
| Collector Current ............... @ TC = 100 | 6.5 | A | |
| I CM(1) | Pulsed Collector Current | 52 | A |
| IF | Diode Continuous Forward Current @ TC = 100 | 8 | A |
| IFM | Diode Maximum Forward Current | 56 | A |
| PD | Maximum Power Dissipation .........@ TC = 25 | 60 | W |
| Maximum Power Dissipation ........@ TC = 100 | 25 | W | |
| TJ | Operating Junction Temperature | -55 to +150 | |
| Tstg | Storage Temperature Range | -55 to +150 | |
| TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
SGW13N60UFD Features
• High speed switching
• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 6.5A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 37ns (typ.)
• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 6.5A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 37ns (typ.)
SGW13N60UFD Typical Application
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
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