SGW20N60HS, SGW23N60UFD, SGW25N120 Selling Leads, Datasheet
MFG:INFINEON Package Cooled:P-TO247-3-1 D/C:2008+
SGW20N60HS, SGW23N60UFD, SGW25N120 Datasheet download
Part Number: SGW20N60HS
MFG: INFINEON
Package Cooled: P-TO247-3-1
D/C: 2008+
SGW20N60HS, SGW23N60UFD, SGW25N120
- Table of contents:
Info of SGW20N60HS
Info of SGW23N60UFD
Info of SGW25N120
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About SGW20N60HS
PDF/DataSheet Download
Datasheet: SGW20N60HS
File Size: 439926 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
About SGW23N60UFD
PDF/DataSheet Download
Datasheet: SGW23N60UFD
File Size: 600254 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SGW25N120
PDF/DataSheet Download
Datasheet: SGW25N120
File Size: 389333 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
SGW20N60HS Maximum Ratings
| Parameter | Symbol | Value | Value |
| Collector-emitter voltage | VCE | 600 | V |
| DC collector current TC = 25 TC = 100 |
IC | 36 20 |
A |
| Pulsed collector current, tp limited by Tjmax | ICpuls | 80 | A |
| Turn off safe operating area VCE 600V, Tj 150 |
- | 80 | A |
| Avalanche energy single pulse IC = 20A, VCC=50V, RGE=25 start TJ=25 |
EAS | 115 | mJ |
| Avalanche energy single pulse IC = 20A, VCC=50V, RGE=25 start TJ=25 |
VGE | ±20 ±30 |
V |
| Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150 |
tSC | 10 | s |
| Power dissipation TC = 25 |
Ptot | 178 | W |
| Operating junction and storage temperature | Tj , Tstg |
-55...+150 | |
| Time limited operating junction temperature for t < 150h | T j(tl) | 175 | |
| Soldering temperature, 1.6mm (0.063 in.) from case for 10s | - | 260 |
SGW23N60UFD General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
SGW23N60UFD Maximum Ratings
| Symbol | Description | SGH15N60RUF | Units |
| VCES | Collector-Emitter Voltage | 600 | V |
| VGES | Gate-Emitter Voltage | ±20 | V |
| IC | Collector Current................ @ TC = 25 | 23 | A |
| Collector Current ............... @ TC = 100 | 12 | A | |
| I CM(1) | Pulsed Collector Current | 92 | A |
| IF | Diode Continuous Forward Current @ TC = 100 | 12 | A |
| IFM | Diode Maximum Forward Current | 92 | A |
| PD | Maximum Power Dissipation .........@ TC = 25 | 100 | W |
| Maximum Power Dissipation ........@ TC = 100 | 40 | W | |
| TJ | Operating Junction Temperature | -55 to +150 | |
| Tstg | Storage Temperature Range | -55 to +150 | |
| TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
SGW23N60UFD Features
• High speed switching
• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 12A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 42ns (typ.)
• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 12A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 42ns (typ.)
SGW23N60UFD Typical Application
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
SGW25N120 Maximum Ratings
| Parameter | Symbol | Value | Value |
| Collector-emitter voltage | VCE | 1200 | V |
| DC collector current TC = 25 TC = 100 |
IC | 46 25 |
A |
| Pulsed collector current, tp limited by Tjmax | ICpuls | 84 | A |
| Turn off safe operating area VCE 1200V, Tj 150 |
- | 84 | A |
| Gate-emitter voltage | VGE | ±20 | V |
| Avalanche energy single pulse IC = 25A, VCC=50V, RGE=25 start TJ=25 |
EAS | 130 | mJ |
| Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150 |
tSC | 10 | s |
| Power dissipation TC = 25 |
Ptot | 313 | W |
| Operating junction and storage temperature | Tj , Tstg |
-55...+150 | |
| Soldering temperature, 1.6mm (0.063 in.) from case for 10s | - | 260 |
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