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SGL50N60RUFTU, SGL5N150UF, SGL60N100BNTD

Table of contents:
Info of SGL50N60RUFTU
Info of SGL5N150UF
Info of SGL60N100BNTD

SGL50N60RUFTU, SGL5N150UF, SGL60N100BNTD Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3PL D/C:01+

SGL50N60RUFTU, SGL5N150UF, SGL60N100BNTD Picture

SGL50N60RUFTU, SGL5N150UF, SGL60N100BNTD Datasheet download

Five Points

Part Number: SGL50N60RUFTU

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-3PL

D/C: 01+

Description: IGBT W/DIODE 100V TO-264

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SGL50N60RUFTU Parameters

Technical/Catalog Information	SGL50N60RUFTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	-
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	80A
Vce(on) (Max) @ Vge, Ic	-
Power - Max	-
Mounting Type	Through Hole
Package / Case	TO-264
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SGL50N60RUFTU SGL50N60RUFTU

SGL5N150UF General Description

Fairchild's Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses.

SGL5N150UF is designed for the Switching Power Supply applications.

SGL5N150UF Maximum Ratings

Symbol	Description	SGH20N120RUFD	Units
V_CES	Collector-Emitter Voltage	1500	V
V_CES	Gate-Emitter Voltage	±25	V
I_C	Collector Current @ T_C = 25	10	A
I_C	Collector Current @ T_C= 100	5	A
I _CM(1)	Pulsed Collector Current	20	A
P_D	Maximum Power Dissipation @ T_C = 25	125	W
P_D	Maximum Power Dissipation @ T_C = 100	50	W
T_J	Operating Junction Temperature	-55 to +150
T_stg	Storage Temperature Range	-55 to +150
T_L	Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds	300

SGL5N150UF Features

• High Speed Switching
• Low Saturation Voltage : V _CE(sat) = 4.7 V @ I_C= 5A
• High Input Impedance

SGL5N150UF Typical Application

Switching Power Supply - High Input Voltage Off-line Converter

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