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SGL10N60RUFD

Features: * Short Circuit rated 10uS @Tc=100°C* High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V @ Ic=10A* High Input Impedance* CO-PAK, IGBT with FRD : Trr = 42nS (Typ)Application* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo Controls* Power Supply* Lamp...

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SeekIC No. : 004489398 Detail

SGL10N60RUFD: Features: * Short Circuit rated 10uS @Tc=100°C* High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V @ Ic=10A* High Input Impedance* CO-PAK, IGBT with FRD : Trr = 42nS (Typ)Application* ...

SGL10N60RUFD Data Sheet

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Part Number:
SGL10N60RUFD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

* Short Circuit rated 10uS @Tc=100°C
* High Speed Switching
* Low Saturation Voltage : VCE(sat) = 1.95 V @ Ic=10A
* High Input Impedance
* CO-PAK, IGBT with FRD : Trr = 42nS (Typ)


Application

* AC & DC Motor controls
* General Purpose Inverters
* Robotics , Servo Controls
* Power Supply
* Lamp Ballast


Specifications

Symbol Characteristics Rating Units
VCES
VGES		 Collector-Emitter Voltage
Gate-Emitter Voltage		 600
±20		 V
V
IC Collector Current @ Tc = 25°C 16 A
Collector Current @ Tc = 100°C 10 A
ICM (1)
IF
IFM		 Pulsed Collector Current
Diode Continuous Forward Current @ Tc = 100°C
Diode Maximum Forward Current		 30
12
92		 A
A
A
PD Maximum Power Dissipation @Tc = 25°C 75 W
Maximum Power Dissipation @Tc = 100°C 30 W
Tj
Tstg		 Operating Junction Temperature
Storage Temperature Range		 -55 ~ 150
-55 ~ 150		 °C
°C
TL Maximum Lead Temp. For Soldering
Purposes, 1/8" from case for 5 seconds		 300 °C
Notes: (1) Repetitive rating : Pulse width limited by max. junction temperature


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