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Fairchild's Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the Switching Power Supply applications.
SGF5N150UF Maximum Ratings
Parameter
Unit
Value
Unit
DC Supply Voltage note 1
VDD
30 32 10
V V mA
Gate Output Current
VFB
500
V
Input Voltage to FB Pin
VSense
-0.3 to 7 V
V
Input Voltage to Sense Pin
Pd
-0.3 to 7V
mW
Input Voltage to RT Pin
TJ
-0.3 to 7V
Operating Junction Temperature
RJA
-0.3 to 7V
°C/W
82.5
.C
Operating Ambient Temperature
Tstg
-25 to 85
°C
Storage Temperature Range
TL
-25 to 85
°C
ESD Capability, HBM model
3.0
kV
ESD Capability, Machine model
250
V
SGF5N150UF Features
• High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A • High Input Impedance
SGF5N150UF Typical Application
Switching Power Supply - High Input Voltage Off-line Converter
SGF80N60UF General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses.UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required.
SGF80N60UF Maximum Ratings
Symbol
Description
SGF15N60RUFD
Units
VCES
Collector-Emitter Voltage
600
V
VCES
Gate-Emitter Voltage
± 25
V
IC
Collector Current @ TC = 25°C
80
A
ICM (1)
Collector Current @ TC = 100°C
40
A
IF
Pulsed Collector Current
220
VGS
Maximum Power Dissipation @ TC = 25°C
110
A
TSTG
Maximum Power Dissipation @ TC = 100°C
45
W
TJ
Operating Junction Temperature
-55 to +150
W
TSTG
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering purposes,1/8" from case for 5 seconds
300
°C
SGF80N60UF Features
• High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 40A • High Input Impedance
SGF80N60UF Typical Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls