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SGF23N60UFD

Features: • High Speed Switching• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A• High Input Impedance• CO-PAK, IGBT with FRD : trr = 42ns (typ.)ApplicationAC & DC Motor controls, General Purpose Inverters, Robotics, Servo ControlsSpecifications Symbol D...

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SeekIC No. : 004489354 Detail

SGF23N60UFD: Features: • High Speed Switching• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A• High Input Impedance• CO-PAK, IGBT with FRD : trr = 42ns (typ.)ApplicationAC & DC ...

SGF23N60UFD Data Sheet

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Part Number:
SGF23N60UFD
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A
• High Input Impedance
• CO-PAK, IGBT with FRD : trr = 42ns (typ.)


Application

AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls


Specifications

Symbol
Description
SGF15N60RUFD
Units
VCES
Collector-Emitter Voltage
600
V
VCES
Gate-Emitter Voltage
± 25
V
IC
Collector Current @ TC = 25°C
23
A
ICM (1)
Collector Current @ TC = 100°C
12
A
IF
Pulsed Collector Current
92
Diode Continuous Forward Current @ TC = 100°C
12
A
VGS
Maximum Power Dissipation @ TC = 25°C
92
A
TSTG
Maximum Power Dissipation @ TC = 100°C
30
W
TJ
Operating Junction Temperature
-55 to +150
W

TSTG
 Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering
purposes,1/8" from case for 5 seconds
300
°C



Description

Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching lossesUFDseries is designed for the applications of SGF23N60UFD such as motor control and general inverters where High Speed Switching is required.




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