IGBT Transistors 600V/12A
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Features: • High Speed Switching• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A...
Features: • High Speed Switching• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 5 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Gate-Emitter Leakage Current : | 30 W | Power Dissipation : | 30 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-3PF-3 |
Packaging : | Tube |