Features: • High speed switching• Low saturation voltage : VCE(sat) = 2.0 V @ IC = 15A• High input impedance• Built-in fast recovery diodeApplicationHome appliances, induction heaters, induction hea 1 ting JARs, and microwave ovens.Specifications Symbol Descriptio...
SGF15N90D: Features: • High speed switching• Low saturation voltage : VCE(sat) = 2.0 V @ IC = 15A• High input impedance• Built-in fast recovery diodeApplicationHome appliances, inductio...
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Features: • Short circuit rated 10us @ TC = 100°C, VGE = 15V• High speed switchingR...
Symbol |
Description |
SGF15N90D |
Units |
VCES |
Collector-Emitter Voltage |
900 |
V |
VCES |
Gate-Emitter Voltage |
± 25 |
V |
IC |
Collector Current @ TC = 25°C |
15 |
A |
I CM (1) |
Collector Current @ TC = 100°C |
12 |
A |
IF |
Pulsed Collector Current |
30 | |
Diode Continuous Forward Current @ TC = 100°C |
12 |
A | |
VGS |
Maximum Power Dissipation @ TC = 25°C |
83 |
A |
TSTG |
Maximum Power Dissipation @ TC = 100°C |
83 |
W |
Operating Junction Temperature | |||
TJ |
Soldering Temperature, for 10 seconds |
33 |
W |
TSTG |
Storage Temperature Range |
-55 to +150 |
°C |
TL |
Maximum Lead Temp. for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching
performance in comparison with transistors having a planar gate structure. SGF15N90D also have wide noise immunity. These SGF15N90D devices are very suitable for induction heating applications.