SGF15N90D, SGF20N40LTF, SGF23N60UFDM1TU Selling Leads, Datasheet
MFG:Fairchild Package Cooled:N/A D/C:09+
SGF15N90D, SGF20N40LTF, SGF23N60UFDM1TU Datasheet download
Part Number: SGF15N90D
MFG: Fairchild
Package Cooled: N/A
D/C: 09+
MFG:Fairchild Package Cooled:N/A D/C:09+
SGF15N90D, SGF20N40LTF, SGF23N60UFDM1TU Datasheet download
MFG: Fairchild
Package Cooled: N/A
D/C: 09+
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PDF/DataSheet Download
Datasheet: SGF15N90D
File Size: 374683 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SGF15N60RUFD
File Size: 687643 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SGF15N60RUFD
File Size: 687643 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching
performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for induction heating applications.
Symbol |
Description |
SGF15N90D |
Units |
VCES |
Collector-Emitter Voltage |
900 |
V |
VCES |
Gate-Emitter Voltage |
± 25 |
V |
IC |
Collector Current @ TC = 25°C |
15 |
A |
I CM (1) |
Collector Current @ TC = 100°C |
12 |
A |
IF |
Pulsed Collector Current |
30 | |
Diode Continuous Forward Current @ TC = 100°C |
12 |
A | |
VGS |
Maximum Power Dissipation @ TC = 25°C |
83 |
A |
TSTG |
Maximum Power Dissipation @ TC = 100°C |
83 |
W |
Operating Junction Temperature | |||
TJ |
Soldering Temperature, for 10 seconds |
33 |
W |
TSTG |
Storage Temperature Range |
-55 to +150 |
°C |
TL |
Maximum Lead Temp. for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |