SGB30N60, SGB40423281, SGB-4333 Selling Leads, Datasheet
MFG:INFINEON Package Cooled:07+ D/C:4000
SGB30N60, SGB40423281, SGB-4333 Datasheet download
Part Number: SGB30N60
MFG: INFINEON
Package Cooled: 07+
D/C: 4000
SGB30N60, SGB40423281, SGB-4333
- Table of contents:
Info of SGB30N60
Info of SGB40423281
Info of SGB-4333
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About SGB30N60
PDF/DataSheet Download
Datasheet: SGB30N60
File Size: 433035 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
About SGB02N120
PDF/DataSheet Download
Datasheet: SGB02N120
File Size: 399002 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
About SGB-4333
PDF/DataSheet Download
Datasheet: SGB-4333
File Size: 143037 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
SGB30N60 Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Collector-emitter voltage |
VCE |
600 |
V |
|
DC collector current TC = 25°C TC = 100°C |
IC |
41 30 |
A
|
|
Pulsed collector current, tp limited by Tjmax |
I Cpul s |
112 | |
|
Turn off safe operating area VCE 600V, Tj 150°C |
- |
112
| |
|
Gate-emitter voltage |
VGE |
±20 |
V |
|
Avalanche energy, single pulse IC = 4 A, VCC = 50 V, RGE = 25 Ω, start at Tj = 25°C |
EAS |
165 |
mJ |
|
Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150°C |
tSC |
10 |
µs |
|
Power dissipation TC = 25°C |
P t o t |
350 |
W |
|
Operating junction and storage temperature |
Tj , Tstg |
-55...+150 |
°C |
SGB30N60 Features
• 75% lower Eoff compared to previous generationcombined with low conduction losses
• Short circuit withstand time 10 µs
• Designed for:- Motor controls- Inverter
• NPT-Technology for 600V applications offers:- very tight parameter distribution- high ruggedness, temperature stable behaviour- parallel switching capability
• Short circuit withstand time 10 µs
• Designed for:- Motor controls- Inverter
• NPT-Technology for 600V applications offers:- very tight parameter distribution- high ruggedness, temperature stable behaviour- parallel switching capability
SGB-4333 General Description
Sirenza Microdevices' SGB-4333 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to 5V supply the SGB-4333 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-4333 product is designed for high linearity 3V gain block applications that require small size and minimal external components. It is on chip matched to 50 ohm and an external bias inductor choke is required for the application band.
SGB-4333 Features
• High reliability SiGe HBT Technology
• Robust Class 1C ESD
• Simple and small size
• P1dB = 10.0dBm @ 1950MHz
• IP3 = 22.5 dBm @ 1950MHz
• Low Thermal Resistance = 76 C/W
• Robust Class 1C ESD
• Simple and small size
• P1dB = 10.0dBm @ 1950MHz
• IP3 = 22.5 dBm @ 1950MHz
• Low Thermal Resistance = 76 C/W
SGB-4333 Typical Application
• 3V Battery operated applications
• LO buffer amp
• RF pre-driver and RF receive path
• LO buffer amp
• RF pre-driver and RF receive path
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