SGB-2233

Series: -
Package / Case: 16-VFQFN Exposed Pad
Manufacturer: RFMD
Test Frequency: 1.95GHz
Packaging: Tape & Reel (TR)
RF Type: General Purpose
Frequency: 0Hz ~ 4.5GHz
Current - Supply: 20mA ~ 40mA
P1dB: 5.2dBm (3.3mW) ~ 6.7dBm (4.7mW)
Gain: 11.4dB ~ 14.4dB
Noise Figure: 4.2dB ~ 5.2dB
Voltage - Supply: 2.6 V ~ 3.6 V


Features:

• High reliability SiGe HBT Technology
• Robust Class 1C ESD
• Simple and small size
• P1dB = 6.7 dBm @ 1950MHz
• IP3 = 19.0 dBm @ 1950MHz
• Low Thermal Resistance = 110 C/W


Application

• 3V Battery operated applications
• LO buffer amp
• RF pre-driver and RF receive path


Specifications

Parameter	Value	Unit
Current (Ic total)	60	mA
Device Voltage (VD)	5	V
Power Dissipation	0.2	W
Operating Lead Temperature (TL)	-40 to +85	ºC
RF Input Power	20	dBm
Storage Temperature Range	40 to +150	°C
Operating Junction Temperature (TJ)	+150	°C

Description

Sirenza Microdevices' SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to 5V supply the SGB-2233 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-2233 product is designed for high linearity 3V gain block applications that require small size and minimal external components. It is on chip matched to 50 ohm and an external bias inductor choke is required for the application band.