SGB06N60, SGB07N120, SGB10N60 Selling Leads, Datasheet
MFG:INFINEON Package Cooled:P-TO263-3-2 D/C:2008+
SGB06N60, SGB07N120, SGB10N60 Datasheet download
Part Number: SGB06N60
MFG: INFINEON
Package Cooled: P-TO263-3-2
D/C: 2008+
SGB06N60, SGB07N120, SGB10N60
- Table of contents:
Info of SGB06N60
Info of SGB07N120
Info of SGB10N60
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About SGB06N60
PDF/DataSheet Download
Datasheet: SGB06N60
File Size: 404051 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
About SGB07N120
PDF/DataSheet Download
Datasheet: SGB07N120
File Size: 395920 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
About SGB10N60
PDF/DataSheet Download
Datasheet: SGB10N60
File Size: 268782 KB
Manufacturer: Siemens Semiconductor Group
Download : Click here to Download
SGB06N60 Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
| Collector-emitter voltage |
VCE |
600 |
V |
| DC collector current TC = 25 TC = 100 |
IC |
12 6.9 |
|
| Pulsed collector current, tp limited by Tjmax |
ICpul s |
24 | |
| Turn off safe operating area VCE 600V, Tj 150 |
- |
24 | |
| Gate-emitter voltage |
VGE |
±20 |
V |
| Avalanche energy, single pulse IC = 6 A, VCC = 50 V, RGE = 25 Ω, start at Tj = 25 |
EAS |
34 |
mJ |
| Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150 |
tSC |
10 |
µs |
| Power dissipation, TC=25 |
Pt o t |
68 |
W |
| Operating and storage temperature |
Tj , Tstg |
-55... +150 |
|
SGB06N60 Features
• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Complete product spectrum and PSpice Models
• Short circuit withstand time 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Complete product spectrum and PSpice Models
SGB07N120 Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Collector-emitter voltage |
VCE |
1200 |
V |
|
DC collector current TC = 25°C TC = 100°C |
IC |
16.5 7.9 |
A
|
|
Pulsed collector current, tp limited by Tjmax |
I Cpul s |
27 | |
|
Turn off safe operating area VCE 600V, Tj 150°C |
- |
27
| |
|
Gate-emitter voltage |
VGE |
±20 |
V |
|
Avalanche energy, single pulse IC = 4 A, VCC = 50 V, RGE = 25 Ω, start at Tj = 25°C |
EAS |
40 |
mJ |
|
Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150°C |
tSC |
10 |
µs |
|
Power dissipation TC = 25°C |
P t o t |
50 |
W |
|
Operating junction and storage temperature |
Tj , Tstg |
-55...+150 |
°C |
SGB10N60 Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage | VCE | 600 | V |
| DC collector current TC = 25°C TC = 100°C |
IC | 21 10.9 |
A |
| Pulsed collector current, tp limited by Tjmax | ICpul s | 42 | |
| Turn off safe operating area VCE 600V, Tj 150°C |
- | 42 | |
| Gate-emitter voltage | VGE | ±20 | V |
| Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 , start at Tj = 25°C |
EAS | 70 | mJ |
| Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150°C |
tSC | 10 | s |
| Power dissipation TC = 25°C |
Pt o t | 104 | W |
| Operating junction and storage temperature | Tj , Tstg | -55...+150 | °C |
SGB10N60 Features
• 75% lower Eoff compared to previous generation combined with
low conduction losses
• Short circuit withstand time 10 s
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
low conduction losses
• Short circuit withstand time 10 s
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
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