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SGB15N60HS

IGBT Transistors IGBT PRODUCTS

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SeekIC No. : 00143796 Detail

SGB15N60HS: IGBT Transistors IGBT PRODUCTS

SGB15N60HS Data Sheet

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Part Number:
SGB15N60HS
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Packaging : Reel    

Description

Configuration :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging : Reel


Features:

• 30% lower Eoff compared to previous generation
• Short circuit withstand time 10 s
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/


Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current
TC = 25°C
TC = 100°C		 IC 27
15		 A
Pulsed collector current, tp limited by Tjmax ICpul s 60
Turn off safe operating area
VCE 600V, Tj 150°C		 - 60
Gate-emitter voltagestatic
transient (tp<1s, D<0.05)		 VGE ±20
±30		 V
Avalanche energy, single pulse
IC = 10 A, VCC = 50 V, RGE = 25 ,
start at Tj = 25°C		 EAS 70 mJ
Short circuit withstand time1)
VGE = 15V, VCC 400V, Tj 150°C		 tSC 10 s
Power dissipation
TC = 25°C		 Pt o t 138 W
Operating junction and storage temperature Tj , Tstg -55...+150 °C
Time limited operating junction temperature for t < 150h Tj ( t l ) 175
Soldering temperature (reflow soldering, MSL1) - 220



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