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SGB10N60: IGBT Transistors FAST IGBT NPT TECH 600V 10A

SGB10N60 Data Sheet

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Part Number:: SGB10N60
Mfg:: Infineon Technologies
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/23

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SGB10N60A evaluate
US $.6 - .8 / Piece

IGBT Transistors FAST IGBT NPT TECH 600V 10A
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Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	600 V
Maximum Gate Emitter Voltage :	+/- 20 V	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-263-3	Packaging :	Reel

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-263-3

Features:

• 75% lower Eoff compared to previous generation combined with
low conduction losses
• Short circuit withstand time 10 s
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability

Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	600	V
DC collector current TC = 25°C TC = 100°C	I_C	21 10.9	A
Pulsed collector current, tp limited by Tjmax	I_{Cpul s}	42
Turn off safe operating area VCE 600V, Tj 150°C	-	42
Gate-emitter voltage	V_GE	±20	V
Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 , start at Tj = 25°C	E_AS	70	mJ
Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150°C	t_SC	10	s
Power dissipation TC = 25°C	P_{t o t}	104	W
Operating junction and storage temperature	T_j, T_stg	-55...+150	°C

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SGB10N60

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