RHRU75120, RHRU7540, RHRU7550 Selling Leads, Datasheet
MFG:Intersil Package Cooled:7850 D/C:08+/09+
RHRU75120, RHRU7540, RHRU7550 Datasheet download
Part Number: RHRU75120
MFG: Intersil
Package Cooled: 7850
D/C: 08+/09+
MFG:Intersil Package Cooled:7850 D/C:08+/09+
RHRU75120, RHRU7540, RHRU7550 Datasheet download
MFG: Intersil
Package Cooled: 7850
D/C: 08+/09+
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PDF/DataSheet Download
Datasheet: RHRU75120
File Size: 43316 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RHRU7540
File Size: 62277 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RHRU7550
File Size: 62277 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
The RHRU75120 (TA49042) is a hyperfast diode with soft recovery characteristics (tRR < 85ns). It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of high frequency switching
power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
RHRU75120 |
UNITS | ||
Peak Repetitive Reverse Voltage |
VRRM |
1200 |
V |
Working Peak Reverse Voltage |
VRWM |
1200 |
V |
DC Blocking Voltage |
VR |
1200 |
V |
Average Rectified Forward Current (TC = +46) |
IF(AV) |
75 |
A |
Repetitive Peak Surge Current (Square Wave, 20kHz) |
IFSM |
150 |
A |
Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz) |
IFSM |
500 |
A |
Maximum Power Dissipation |
PD |
190 |
W |
Avalanche Energy (L = 40mH) |
EAVL |
50 |
mj |
Operating and Storage Temperature |
TSTG,TJ |
-65to175 |
RHRU7540, RHRU7550 and RHRU7560 (TA49067) are hyperfast diodes with soft recovery characteristics (tRR < 55ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power loss in the switching transistors.
RHRU7540 |
RHRU7550 |
RHRU7560 |
UNITS | ||
Peak Repetitive Reverse Voltage |
VRRM |
400 |
500 |
600 |
V |
Working Peak Reverse Voltage |
VRWM |
400 |
500 |
600 |
V |
DC Blocking Voltage |
VR |
400 |
500 |
600 |
V |
Average Rectified Forward Current (TC = +80) |
IF(AV) |
75 |
75 |
75 |
A |
Repetitive Peak Surge Current (Square Wave, 20kHz) |
IFSM |
150 |
150 |
150 |
A |
Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz) |
IFSM |
750 |
750 |
750 |
A |
Maximum Power Dissipation |
PD |
190 |
190 |
190 |
W |
Avalanche Energy (See Figures 10 and 11). |
EAVL |
50 |
50 |
50 |
mj |
Operating and Storage Temperature |
TSTG,TJ |
-65to+175 |
-65to+175 |
-65to+175 |
RHRU7540, RHRU7550 and RHRU7560 (TA49067) are hyperfast diodes with soft recovery characteristics (tRR < 55ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power loss in the switching transistors.
RHRU7540 |
RHRU7550 |
RHRU7560 |
UNITS | ||
Peak Repetitive Reverse Voltage |
VRRM |
400 |
500 |
600 |
V |
Working Peak Reverse Voltage |
VRWM |
400 |
500 |
600 |
V |
DC Blocking Voltage |
VR |
400 |
500 |
600 |
V |
Average Rectified Forward Current (TC = +80) |
IF(AV) |
75 |
75 |
75 |
A |
Repetitive Peak Surge Current (Square Wave, 20kHz) |
IFSM |
150 |
150 |
150 |
A |
Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz) |
IFSM |
750 |
750 |
750 |
A |
Maximum Power Dissipation |
PD |
190 |
190 |
190 |
W |
Avalanche Energy (See Figures 10 and 11). |
EAVL |
50 |
50 |
50 |
mj |
Operating and Storage Temperature |
TSTG,TJ |
-65to+175 |
-65to+175 |
-65to+175 |