RHRD4120S

Packaging :
Product : Ultra Fast Recovery Rectifiers
Mounting Style : SMD/SMT
Configuration : Single
Forward Continuous Current : 4 A
Reverse Current IR : 100 ua
Max Surge Current : 40 A
Recovery Time : 70 ns
Reverse Voltage : 1200 V
Package / Case : TO-252
Forward Voltage Drop : 3.2 V


Features:

• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <60ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
• Planar Construction


Application

• Switching Power Supplies
• Power Switching Circuits
• General Purpose


Specifications

		RHRD4120, RHRD4120S	UNITS
Peak Repetitive Reverse Voltage	VRRM	1200	V
Working Peak Reverse Voltage	VRWM	1200	V
DC Blocking Voltage	VR	1200	V
Average Rectified Forward Current (TC = 147.5)	IF(AV)	4	A
Repetitive Peak Surge Current (Square Wave, 20kHz)	IFRM	8	A
Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz)	IFSM	40	A
Maximum Power Dissipation	PD	50	W
Avalanche Energy (See Figures 10 and 11).	EAVL	10	mj
Operating and Storage Temperature	TSTG,TJ	-65to+175
Maximum Lead Temperature for Soldering (Leads at 0.063 in. (1.6mm) from case for 10s)	TL	300
Package Body for 10s, see Tech Brief 334	TPKG	260

Description

The RHRD4120 and RHRD4120S are hyperfast diodes with soft recovery characteristics (t_rr < 60ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.

These devices RHRD4120S are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, reducing power loss in the switching transistors


Formerly development type TA49056.