MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:02+
RHRD660, RHRD660S, RHRD660S9A Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: N/A
D/C: 02+
Description: DIODE HYPER 6A 600V TO-252
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PDF/DataSheet Download
Datasheet: RHRD660
File Size: 73077 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RHRD660S
File Size: 383071 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RHR15120
File Size: 382763 KB
Manufacturer: Fairchild
Download : Click here to Download
The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics (trr < 30ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Formerly developmental type TA49057.
|
RHRD660,RHRD660S |
UNITS | ||
| Peak Repetitive Reverse Voltage |
VRRM |
600 |
V |
| Working Peak Reverse Voltage |
VRWM |
600 |
V |
| DC Blocking Voltage |
VR |
600 |
V |
| Average Rectified Forward Current (TC = 152) |
IF(AV) |
6 |
A |
|
Repetitive Peak Surge Current |
IFRM |
12 |
A |
|
Nonrepetitive Peak Surge Current |
IFSM |
60 |
A |
| Maximum Power Dissipation |
PD |
50 |
W |
| Avalanche Energy (See Figures 10 and 11) |
EAVL |
10 |
mJ |
| Operating and Storage Temperature |
TSTG,TJ |
-65to175 |
|
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s |
TL |
300 |
|
| Package Body for 10s, see Tech Brief 334 |
TPKG |
260 |
|
The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics (trr < 30ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Formerly developmental type TA49057.
|
RHRD660,RHRD660S |
UNITS | ||
| Peak Repetitive Reverse Voltage |
VRRM |
600 |
V |
| Working Peak Reverse Voltage |
VRWM |
600 |
V |
| DC Blocking Voltage |
VR |
600 |
V |
| Average Rectified Forward Current (TC = 152) |
IF(AV) |
6 |
A |
|
Repetitive Peak Surge Current |
IFRM |
12 |
A |
|
Nonrepetitive Peak Surge Current |
IFSM |
60 |
A |
| Maximum Power Dissipation |
PD |
50 |
W |
| Avalanche Energy (See Figures 10 and 11) |
EAVL |
10 |
mJ |
| Operating and Storage Temperature |
TSTG,TJ |
-65to175 |
|
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s |
TL |
300 |
|
| Package Body for 10s, see Tech Brief 334 |
TPKG |
260 |
|
| Technical/Catalog Information | RHRD660S9A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 6A |
| Voltage - Forward (Vf) (Max) @ If | 2.1V @ 6A |
| Reverse Recovery Time (trr) | 35ns |
| Current - Reverse Leakage @ Vr | 100A @ 600V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Surface Mount |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| Packaging | Tape & Reel (TR) |
| Capacitance @ Vr, F | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RHRD660S9A RHRD660S9A |
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