RHRD460S, RHRD6120, RHRD6120S Selling Leads, Datasheet
MFG:Intersil Package Cooled:7850 D/C:02+
RHRD460S, RHRD6120, RHRD6120S Datasheet download
Part Number: RHRD460S
MFG: Intersil
Package Cooled: 7850
D/C: 02+
MFG:Intersil Package Cooled:7850 D/C:02+
RHRD460S, RHRD6120, RHRD6120S Datasheet download
MFG: Intersil
Package Cooled: 7850
D/C: 02+
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PDF/DataSheet Download
Datasheet: RHRD460S
File Size: 51584 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RHRD6120
File Size: 78541 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RHRD6120S
File Size: 78541 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
The RHRD440, RHRD460, RHRD440S and RHRD460S are hyperfast diodes with soft recovery characteristics (trr < 30ns). They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted
epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits,reducing power loss in the switching transistors.
Formerly developmental type TA49055.
RHRD440, RHRD440S |
RHRD460, RHRD460S |
UNITS | ||
Peak Repetitive Reverse Voltage |
VRRM |
400 |
600 |
V |
Working Peak Reverse Voltage |
VRWM |
400 |
600 |
V |
DC Blocking Voltage |
VR |
400 |
600 |
V |
Average Rectified Forward Current (TC = 157) |
IF(AV) |
4 |
4 |
A |
Repetitive Peak Surge Current |
IFRM |
8 |
8 |
A |
Nonrepetitive Peak Surge Current |
IFSM |
40 |
40 |
A |
Maximum Power Dissipation |
PD |
50 |
50 |
W |
Avalanche Energy (See Figures 10 and 11) |
EAVL |
10 |
10 |
mJ |
Operating and Storage Temperature |
TSTG,TJ |
-65to175 |
-65to175 |
|
Maximum Lead Temperature for Soldering (Leads at 0.063 in. (1.6mm) from case for 10s) |
TL |
300 |
300 |
|
Package Body for 10s, see Tech Brief 334 |
TPKG |
260 |
260 |
The RHRD6120 and RHRD6120S are hyperfast diodes with soft recovery characteristics (trr < 55ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits,reducing power loss in the switching transistors.
Formerly development type TA49058.
RHRD6120, RHRD6120S |
UNITS | ||
Peak Repetitive Reverse Voltage |
VRRM |
1200 |
V |
Working Peak Reverse Voltage |
VRWM |
1200 |
V |
DC Blocking Voltage |
VR |
1200 |
V |
Average Rectified Forward Current (TC = 130) |
IF(AV) |
6 |
A |
Repetitive Peak Surge Current (Square Wave, 20kHz) |
IFRM |
12 |
A |
Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz) |
IFSM |
60 |
A |
Maximum Power Dissipation |
PD |
50 |
W |
Avalanche Energy (See Figures 10 and 11) |
EAVL |
10 |
mJ |
Operating and Storage Temperature |
TSTG,TJ |
-65to+175 |
|
Maximum Lead Temperature for Soldering (Leads at 0.063 in. (1.6mm) from case for 10s) |
TL |
300 |
|
Package Body for 10s, see Tech Brief 334 |
TPKG |
260 |
The RHRD6120 and RHRD6120S are hyperfast diodes with soft recovery characteristics (trr < 55ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits,reducing power loss in the switching transistors.
Formerly development type TA49058.
RHRD6120, RHRD6120S |
UNITS | ||
Peak Repetitive Reverse Voltage |
VRRM |
1200 |
V |
Working Peak Reverse Voltage |
VRWM |
1200 |
V |
DC Blocking Voltage |
VR |
1200 |
V |
Average Rectified Forward Current (TC = 130) |
IF(AV) |
6 |
A |
Repetitive Peak Surge Current (Square Wave, 20kHz) |
IFRM |
12 |
A |
Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz) |
IFSM |
60 |
A |
Maximum Power Dissipation |
PD |
50 |
W |
Avalanche Energy (See Figures 10 and 11) |
EAVL |
10 |
mJ |
Operating and Storage Temperature |
TSTG,TJ |
-65to+175 |
|
Maximum Lead Temperature for Soldering (Leads at 0.063 in. (1.6mm) from case for 10s) |
TL |
300 |
|
Package Body for 10s, see Tech Brief 334 |
TPKG |
260 |