MFG:Rohm Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220
RDN080, RDN080N25, RDN100N20 Datasheet download
Category: Discrete Semiconductor Products
MFG: Rohm Semiconductor
Package Cooled: TO-220
D/C:
Description: MOSFET N-CH 250V 8A TO-220FN
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PDF/DataSheet Download
Datasheet: RDN080N25
File Size: 55264 KB
Manufacturer: ROHM [Rohm]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RDN080N25
File Size: 55264 KB
Manufacturer: ROHM [Rohm]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RDN100N20
File Size: 63619 KB
Manufacturer: ROHM [Rohm]
Download : Click here to Download
| Technical/Catalog Information | RDN080N25 |
| Vendor | Rohm Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25° C | 8A |
| Rds On (Max) @ Id, Vgs | 500 mOhm @ 4A, 10V |
| Input Capacitance (Ciss) @ Vds | 543pF @ 10V |
| Power - Max | 35W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 30nC @ 10V |
| Package / Case | TO-220FN-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RDN080N25 RDN080N25 |
| Parameter | Symbol | Limits | UNIT | |
| Drain-Source Voltage | VDSS | 250 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Drain Current | Continuous | ID | 8 | A |
| Pulsed | IDP *1 | 32 | A | |
| Reverse Drain Current | Continuous | DR | 8 | A |
| Pulsed | DRP *1 | 32 | A | |
| Avalanche Current | IAS *2 | 8 | A | |
| Avalanche Energy | EAS *2 | 136 | mJ | |
| Total Power Dissipation (TC=25) | PD | 35 | W | |
| Channel Temperature | Tch | 150 | ||
| Storage Temperature | Tstg | −55 to +150 | ||
| Parameter | Symbol | Limits | UNIT | |
| Drain-Source Voltage | VDSS | 200 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Drain Current | Continuous | ID | 10 | A |
| Pulsed | IDP *1 | 40 | A | |
| Reverse Drain Current | Continuous | DR | 10 | A |
| Pulsed | DRP *1 | 40 | A | |
| Avalanche Current | IAS *2 | 10 | A | |
| Avalanche Energy | EAS *2 | 120 | mJ | |
| Total Power Dissipation (TC=25) | PD | 35 | W | |
| Channel Temperature | Tch | 150 | ||
| Storage Temperature | Tstg | −55 to +150 | ||
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