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RDN100N20

MOSFET

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SeekIC No. : 00159517 Detail

RDN100N20: MOSFET

RDN100N20 Data Sheet

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Part Number:
RDN100N20
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.36 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FN Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Packaging : Bulk
Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.36 Ohms
Package / Case : TO-220FN


Features:

1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.


Application

Switching


Specifications

Parameter Symbol Limits UNIT
Drain-Source Voltage VDSS 200 V
Gate-Source Voltage VGSS ±30 V
Drain Current Continuous ID 10 A
Pulsed IDP  *1 40 A
Reverse Drain Current Continuous DR 10 A
Pulsed DRP  *1 40 A
Avalanche Current IAS   *2 10 A
Avalanche Energy EAS   *2 120 mJ
Total Power Dissipation (TC=25) PD 35 W
Channel Temperature Tch 150
Storage Temperature Tstg −55 to +150

*1 Pw 10s, Duty cycle 1%
*2 L 4.5mH, VDD=50V, RG=25, 1Pulse, Tch=25


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