RDN080N25

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 8A
Drain to Source Voltage (Vdss): 250V
Gate Charge (Qg) @ Vgs: 30nC @ 10V
Mounting Type: Through Hole
Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V
Packaging: Bulk
Power - Max: 35W
Package / Case: TO-220-3 Full Pack
Manufacturer: Rohm Semiconductor
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FN
Input Capacitance (Ciss) @ Vds: 543pF @ 10V


Features:

1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.


Application

Switching


Specifications

Parameter		Symbol	Limits	UNIT
Drain-Source Voltage		VDSS	250	V
Gate-Source Voltage		VGSS	±30	V
Drain Current	Continuous	ID	8	A
	Pulsed	IDP *1	32	A
Reverse Drain Current	Continuous	DR	8	A
	Pulsed	DRP *1	32	A
Avalanche Current		IAS *2	8	A
Avalanche Energy		EAS *2	136	mJ
Total Power Dissipation (TC=25)		PD	35	W
Channel Temperature		Tch	150
Storage Temperature		Tstg	−55 to +150

*1 Pw 10s, Duty cycle 1%
*2 L 4.5mH, V_DD=50V, R_G=25, 1Pulse, Tch=25


Parameters:

Technical/Catalog Information	RDN080N25
Vendor	Rohm Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	500 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	543pF @ 10V
Power - Max	35W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	TO-220FN-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RDN080N25 RDN080N25