RDN050N20

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 5A
Drain to Source Voltage (Vdss): 200V
Mounting Type: Through Hole
Power - Max: 30W
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Manufacturer: Rohm Semiconductor
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 720 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds: 292pF @ 10V
Gate Charge (Qg) @ Vgs: 18.6nC @ 10V
Supplier Device Package: TO-220FN


Features:

·Low on-resistance.
·Low input capacitance.
·Exellent resistance to damage from static electricity.


Application

Switching


Specifications

Parameter		Symbol	Limits	Unit
Drain-Source Voltage		VDSS	200	V
Gate-Source Voltage		VGSS	±30	V
Drain Current	Continuous	ID	5	A
	Pulsed	IDP	20	A
Reverse Drain Current	Continuous	IDR	5	A
	Pulsed	IDRP	20	A
Avalanche Current		IAS	5	A
Avalanche Energy		EAS	75	mJ
Total Power Dissipation (TC =25)		PD	30	W
Channel Temperature		TCH	150
Storage Temperature		TSTG	-55 to 150

Parameters:

Technical/Catalog Information	RDN050N20
Vendor	Rohm Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	5A
Rds On (Max) @ Id, Vgs	720 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds	292pF @ 10V
Power - Max	30W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	18.6nC @ 10V
Package / Case	TO-220FN-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RDN050N20 RDN050N20