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RDN050N20FU6

MOSFET PWR MOSFET TR DRIVE VLT-10V

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SeekIC No. : 00158262 Detail

RDN050N20FU6: MOSFET PWR MOSFET TR DRIVE VLT-10V

RDN050N20FU6 Data Sheet

floor Price/Ceiling Price

US $ .32~.33 / Piece | Get Latest Price
Part Number:
RDN050N20FU6
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~500
  • 500~1000
  • Unit Price
  • $.33
  • $.32
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/19

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Product Details

Quick Details

Drain-Source Breakdown Voltage : 200 V Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.55 Ohms Mounting Style : Through Hole
Package / Case : TO-220FN Packaging : Bulk    

Description

Transistor Polarity :
Gate-Source Breakdown Voltage :
Configuration :
Maximum Operating Temperature :
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 200 V
Packaging : Bulk
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.55 Ohms
Package / Case : TO-220FN


Parameters:

Technical/Catalog InformationRDN050N20FU6
VendorRohm Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C5A
Rds On (Max) @ Id, Vgs720 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds 292pF @ 10V
Power - Max30W
PackagingBulk
Gate Charge (Qg) @ Vgs18.6nC @ 10V
Package / CaseTO-220FN-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RDN050N20FU6
RDN050N20FU6



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