MOSFET PWR MOSFET TR DRIVE VLT-10V
RDN050N20FU6: MOSFET PWR MOSFET TR DRIVE VLT-10V
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Drain-Source Breakdown Voltage : | 200 V | Continuous Drain Current : | 8 A | ||
Resistance Drain-Source RDS (on) : | 0.55 Ohms | Mounting Style : | Through Hole | ||
Package / Case : | TO-220FN | Packaging : | Bulk |
Technical/Catalog Information | RDN050N20FU6 |
Vendor | Rohm Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 5A |
Rds On (Max) @ Id, Vgs | 720 mOhm @ 2.5A, 10V |
Input Capacitance (Ciss) @ Vds | 292pF @ 10V |
Power - Max | 30W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 18.6nC @ 10V |
Package / Case | TO-220FN-3 (Straight Leads) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | RDN050N20FU6 RDN050N20FU6 |