RDN150N20

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 15A
Power - Max: 40W
Packaging: Bulk
Gate Charge (Qg) @ Vgs: 64nC @ 10V
Package / Case: TO-220-3 Full Pack
Manufacturer: Rohm Semiconductor
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 160 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds: 1224pF @ 10V
Supplier Device Package: TO-220FN


Features:

1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.


Application

Switching


Specifications

Parameter		Symbol	Limits	UNIT
Drain-Source Voltage		VDSS	200	V
Gate-Source Voltage		VGSS	±30	V
Drain Current	Continuous	ID	15	A
	Pulsed	IDP *1	45	A
Reverse Drain Current	Continuous	DR	15	A
	Pulsed	DRP *1	45	A
Avalanche Current		IAS *2	15	A
Avalanche Energy		EAS *2	210	mJ
Total Power Dissipation (TC=25)		PD	40	W
Channel Temperature		Tch	150
Storage Temperature		Tstg	−55 to +150

*1 Pw 10s, Duty cycle 1%
*2 L 4.5mH, V_DD=50V, R_G=25, 1Pulse, Tch=25