RA62, RA625243V(SP302V4.0-M106-F), RA63-1 Selling Leads, Datasheet
MFG:M/A-COM Package Cooled:N/A D/C:N/A
RA62, RA625243V(SP302V4.0-M106-F), RA63-1 Datasheet download
Part Number: RA62
MFG: M/A-COM
Package Cooled: N/A
D/C: N/A
MFG:M/A-COM Package Cooled:N/A D/C:N/A
RA62, RA625243V(SP302V4.0-M106-F), RA63-1 Datasheet download
MFG: M/A-COM
Package Cooled: N/A
D/C: N/A
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PDF/DataSheet Download
Datasheet: RA60H1317M
File Size: 59926 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RA60H1317M
File Size: 59926 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RA60H1317M
File Size: 59926 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
The RA62 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability.
This two stage GaAs FET feedback amplifier design displays impressive performance characteristics over a broadband frequency range. Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available.
Parameter |
Parameter |
Storage Temperature Case Temperature DC Voltage Continuous Input Power Short Term Input power (1 minute max.) Peak Power (3 Fsec max.) "S" Series Burn-In Temperature (case) |
-62ºC to +125ºC 125ºC +6 V +7 dBm 100 mW 0.25 W 125ºC |
The RA63-1 microwave amplifier is designed as the discrete hybrid which uses thin film manufacturing processes for accurate performance and high reliability.This two stage GaAs FET feedback amplifier design displays impressive performance characteristics over a brosdband frequency range.Both TO-8B and surface mount packages are hermetically sealed and MIL-STD-883 environmental screening is available.Features of the RA63-1 are:(1)ultrawide bandwidth:1.8 to 6.2 GHz(typ.);(2)high gain:19.5 dB(typ.);(3)high output power:+16.0 dBM(typ.);(4)low power supply voltage:+5 Vdc.
The absolute maximum ratings of the RA63-1 can be summarized as:(1)storage temperature:-64 to +125;(2)case temperature:+125;(3)DC voltage:+6 V;(4)continuous input power:+7 dBm;(5)short term input power(1 minute max.):100 mW;(6)peak power:0.25 W;(7)"S" series burn-in temperature(case): +125.
The electrical specifictions can be summarized as:(1)frequency:1.8 to 6.2 GHz;(2)small signal gain(min):22.0 dB;(3)gain flatness(max):+/-0.5 dB;(4)reverse isolation:50 dB;(5)noise figure(max):5.5 dB;(6)power output @ 1 dB comp.(min):16.0 dBm;(7)second order harmonic IP:+54 dBm;(8)DC current @ 5 volts(max):120 mA.