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RA62, RA625243V(SP302V4.0-M106-F), RA63-1

RA62, RA625243V(SP302V4.0-M106-F), RA63-1 Selling Leads, Datasheet

MFG:M/A-COM  Package Cooled:N/A  D/C:N/A

RA62, RA625243V(SP302V4.0-M106-F), RA63-1 Picture

RA62, RA625243V(SP302V4.0-M106-F), RA63-1 Datasheet download

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Part Number: RA62

 

MFG: M/A-COM

Package Cooled: N/A

D/C: N/A

 

 

 
 
 
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About RA60H1317M

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Datasheet: RA60H1317M

File Size: 59926 KB

Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

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RA625243V(SP302V4.0-M106-F) Suppliers

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About RA60H1317M

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Datasheet: RA60H1317M

File Size: 59926 KB

Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

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About RA60H1317M

PDF/DataSheet Download

Datasheet: RA60H1317M

File Size: 59926 KB

Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

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RA62 General Description

The RA62 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability.

This two stage GaAs FET feedback amplifier design displays impressive performance characteristics over a broadband frequency range. Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available.

RA62 Maximum Ratings

Parameter
Parameter
Storage Temperature

Case Temperature

DC Voltage

Continuous Input Power

Short Term Input power
(1 minute max.)

Peak Power (3 Fsec max.)

"S" Series Burn-In
Temperature (case)
-62ºC to +125ºC

125ºC

+6 V

+7 dBm


100 mW

0.25 W


125ºC

RA62 Features

• ULTRAWIDE BANDWIDTH 1.5-6.2 GHz (TYP.)
• MEDIUM GAIN 16 dB (TYP.)
• MEDIUM OUTPUT POWER +13 dBm (TYP.)
• LOW NOISE FIGURE 4 dB (TYP.)

RA63-1 General Description

The RA63-1 microwave amplifier is designed as the discrete hybrid which uses thin film manufacturing processes for accurate performance and high reliability.This two stage GaAs FET feedback amplifier design displays impressive performance characteristics over a brosdband frequency range.Both TO-8B and surface mount packages are hermetically sealed and MIL-STD-883 environmental screening is available.Features of the RA63-1 are:(1)ultrawide bandwidth:1.8 to 6.2 GHz(typ.);(2)high gain:19.5 dB(typ.);(3)high output power:+16.0 dBM(typ.);(4)low power supply voltage:+5 Vdc.

The absolute maximum ratings of the RA63-1 can be summarized as:(1)storage temperature:-64 to +125;(2)case temperature:+125;(3)DC voltage:+6 V;(4)continuous input power:+7 dBm;(5)short term input power(1 minute max.):100 mW;(6)peak power:0.25 W;(7)"S" series burn-in temperature(case): +125.

The electrical specifictions can be summarized as:(1)frequency:1.8 to 6.2 GHz;(2)small signal gain(min):22.0 dB;(3)gain flatness(max):+/-0.5 dB;(4)reverse isolation:50 dB;(5)noise figure(max):5.5 dB;(6)power output @ 1 dB comp.(min):16.0 dBm;(7)second order harmonic IP:+54 dBm;(8)DC current @ 5 volts(max):120 mA.



RA63-1 Maximum Ratings



RA63-1 Features



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