Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)• Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 400-470MHz• Metal shield structure that makes the improvements of spurious radiation simple• Low-Power Control C...
RA60H4047M1: Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)• Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 400-470MHz• Metal ...
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SYMBOL |
PARAMETER | CONDITIONS |
RATING |
UNIT |
VDD |
Drain Voltage | VGG<5V, Pin=0W |
17 |
V |
VGG |
Gate Voltage | VDD<12.5V, Pin=50mW |
6 |
V |
Pin |
Input Power | f=400-470MHz, VGG<5V |
100 |
mW |
Pout |
Output Power |
80 |
W | |
Tcase(OP) |
Operation Case Temperature Range |
-30 to +100 |
°C | |
Tstg |
Storage Temperature Range |
-40 to +110 |
°C |
The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors RA60H4047M1. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum). The nominal output power becomes available at the state that VGG is 4V (typical) and 5V (maximum). At VGG=5V, the typical gate currents are 5mA.This module RA60H4047M1 is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.