RA60H4047M1

Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)• Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 400-470MHz• Metal shield structure that makes the improvements of spurious radiation simple• Low-Power Control C...

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SeekIC No. : 004469704 Detail

RA60H4047M1: Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)• Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 400-470MHz• Metal ...

floor Price/Ceiling Price

Part Number:
RA60H4047M1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)
• Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 400-470MHz
• Metal shield structure that makes the improvements of spurious radiation simple
• Low-Power Control Current IGG=5mA (typ) @ VGG=5V
• Module Size: 67 x 18 x 9.9 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.





Specifications

SYMBOL
PARAMETER CONDITIONS
RATING
UNIT
VDD
Drain Voltage VGG<5V, Pin=0W
17
V
VGG
Gate Voltage VDD<12.5V, Pin=50mW
6
V
Pin
Input Power f=400-470MHz,
VGG<5V
100
mW
Pout
Output Power
80
W
Tcase(OP)
Operation Case Temperature Range
-30 to +100
°C
Tstg
Storage Temperature Range
-40 to +110
°C





Description

The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors RA60H4047M1. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum). The nominal output power becomes available at the state that VGG is 4V (typical) and 5V (maximum). At VGG=5V, the typical gate currents are 5mA.This module RA60H4047M1 is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.






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