RA60H1317M, RA60H4452M, RA6N-2R6ZJ Selling Leads, Datasheet
MFG:MIT Package Cooled:NEW AND ORIGINAL D/C:04+
RA60H1317M, RA60H4452M, RA6N-2R6ZJ Datasheet download
Part Number: RA60H1317M
MFG: MIT
Package Cooled: NEW AND ORIGINAL
D/C: 04+
RA60H1317M, RA60H4452M, RA6N-2R6ZJ
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Info of RA60H1317M
Info of RA60H4452M
Info of RA6N-2R6ZJ
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About RA60H1317M
PDF/DataSheet Download
Datasheet: RA60H1317M
File Size: 59926 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
About RA60H1317M
PDF/DataSheet Download
Datasheet: RA60H1317M
File Size: 59926 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
About RA60H1317M
PDF/DataSheet Download
Datasheet: RA60H1317M
File Size: 59926 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
RA60H1317M General Description
The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
RA60H1317M Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | RATING | UNIT |
| VDD | Drain Voltage | VGG<5V | 17 | V |
| VGG | Gate Voltage | VDD<12.5V, Pin=0mW | 6 | V |
| Pin | Input Power | f=135-175MHz, Z G=Z L =50 |
100 | mW |
| Pout | Output Power | 75 | W | |
| Tcase(OP) | Operation Case Temperature Range |
-30 to +110 | ||
| Tstg | Storage Temperature Range | -40 to +110 |
RA60H1317M Features
* Enhancement-Mode MOSFET Transistors (IDD@0 @ VDD=12.5V, VGG=0V)
* Pout>60W, hT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequency Range: 135-175MHz
* Low-Power Control Current IGG=1mA (typ) at VGG=5V
* Module Size: 66 x 21 x 9.88 mm
* Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
* Pout>60W, hT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequency Range: 135-175MHz
* Low-Power Control Current IGG=1mA (typ) at VGG=5V
* Module Size: 66 x 21 x 9.88 mm
* Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
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