RA63-1

The RA63-1 microwave amplifier is designed as the discrete hybrid which uses thin film manufacturing processes for accurate performance and high reliability.This two stage GaAs FET feedback amplifier design displays impressive performance characteristics over a brosdband frequency range.Both TO-8B and surface mount packages are hermetically sealed and MIL-STD-883 environmental screening is available.Features of the RA63-1 are:(1)ultrawide bandwidth:1.8 to 6.2 GHz(typ.);(2)high gain:19.5 dB(typ.);(3)high output power:+16.0 dBM(typ.);(4)low power supply voltage:+5 Vdc.

The absolute maximum ratings of the RA63-1 can be summarized as:(1)storage temperature:-64 to +125;(2)case temperature:+125;(3)DC voltage:+6 V;(4)continuous input power:+7 dBm;(5)short term input power(1 minute max.):100 mW;(6)peak power:0.25 W;(7)"S" series burn-in temperature(case): +125.

The RA63-1 electrical specifictions can be summarized as:(1)frequency:1.8 to 6.2 GHz;(2)small signal gain(min):22.0 dB;(3)gain flatness(max):+/-0.5 dB;(4)reverse isolation:50 dB;(5)noise figure(max):5.5 dB;(6)power output @ 1 dB comp.(min):16.0 dBm;(7)second order harmonic IP:+54 dBm;(8)DC current @ 5 volts(max):120 mA.