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RA45H4045MR, RA45H4047M, RA45H4452M

Table of contents:
Info of RA45H4045MR
Info of RA45H4047M
Info of RA45H4452M

RA45H4045MR, RA45H4047M, RA45H4452M Selling Leads, Datasheet

MFG:412 Package Cooled:H2RS D/C:N/A

RA45H4045MR, RA45H4047M, RA45H4452M Picture

RA45H4045MR, RA45H4047M, RA45H4452M Datasheet download

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Part Number: RA45H4045MR

MFG: 412

Package Cooled: H2RS

D/C: N/A

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RA45H4045MR General Description

The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 450-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V_GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At V_GG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

RA45H4045MR Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	RATING	UNIT
V_DD	Drain Voltage	V_GG<5V	17	V
V_GG	Gate Voltage	V_DD<12.5V, P_in=0W	6	V
P_in	Input Power	f=400-450MHz, Z_G=Z_L=50	100	mW
P_out	Output Power	f=400-450MHz, Z_G=Z_L=50	55	W
T_case(OP)	Operation Case Temperature Range		-30 to +90	°C
T_stg	Storage Temperature Range		-40 to +110	°C

Above Parameters are guaranteed independently

RA45H4045MR Features

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>45W, T>35% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 400-450MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Reverse PIN type
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

RA45H4452M General Description

The RA45H4452M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

RA45H4452M Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	RATING	UNIT
V_DD	Drain Voltage	VGG<5V	17	V
V_GG	Gate Voltage	V_DD<12.5V, P_in=0mW	6	V
P_in	Input Power	f=440-520MHz, ZG=ZL=50Ω	100	mW
P_out	Output Power		55	W
T _case(OP)	Operation Case Temperature Range		-30 to +110	°C
T_stg	Storage Temperature Range		-40 to +110	°C

RA45H4452M Features

• Enhancement-Mode MOSFET Transistors
(I_DD=0 @ V_DD=12.5V, V_GG=0V)
• P_out>45W, T>35% @ V_DD=12.5V, V_GG=5V, Pin=50mW
• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

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