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RA45H4045MR

Features: • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)• Pout>45W, T>35% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 400-450MHz• Low-Power Control Current IGG=1mA (typ) at VGG=5V• Module Size: 66 x 21 x 9.88 mm• Reve...

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SeekIC No. : 004469685 Detail

RA45H4045MR: Features: • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)• Pout>45W, T>35% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 400-450MHz•...

RA45H4045MR Data Sheet

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Part Number:
RA45H4045MR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>45W, T>35% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 400-450MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Reverse PIN type
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power




Specifications

SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VDD
 Drain Voltage VGG<5V
17
V
VGG
 Gate Voltage VDD<12.5V, Pin=0W
6
V
Pin
 Input Power f=400-450MHz,
ZG=ZL=50
100
mW
Pout
 Output Power
55
W
Tcase(OP)
 Operation Case Temperature Range
-30 to +90
°C
Tstg
 Storage Temperature Range
-40 to +110
°C
Above Parameters are guaranteed independently




Description

The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 450-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.
This module RA45H4045MR is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.






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