Features: • Enhancement-Mode MOSFET Transistors(IDD=0 @ VDD=12.5V, VGG=0V)• Pout>45W, T>35% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 440-520MHz• Low-Power Control Current IGG=1mA (typ) at VGG=5V• Module Size: 66 x 21 x 9.88 mm• Linear oper...
RA45H4452M: Features: • Enhancement-Mode MOSFET Transistors(IDD=0 @ VDD=12.5V, VGG=0V)• Pout>45W, T>35% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 440-520MHz• Low-Po...
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SYMBOL | PARAMETER | CONDITIONS | RATING | UNIT |
VDD | Drain Voltage | VGG<5V | 17 | V |
VGG | Gate Voltage | VDD<12.5V, Pin=0mW | 6 | V |
Pin | Input Power | f=440-520MHz, ZG=ZL=50Ω |
100 | mW |
Pout | Output Power | 55 | W | |
T case(OP) | Operation Case Temperature Range | -30 to +110 | °C | |
Tstg | Storage Temperature Range | -40 to +110 | °C |
The RA45H4452M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors RA45H4452M. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module RA45H4452M is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.