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RA118, RA1211AA, RA13H1317M

Table of contents:
Info of RA118
Info of RA1211AA
Info of RA13H1317M

RA118, RA1211AA, RA13H1317M Selling Leads, Datasheet

MFG:MITSUBISHI Package Cooled:TQ220 D/C:05+

RA118, RA1211AA, RA13H1317M Datasheet download

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Part Number: RA118

MFG: MITSUBISHI

Package Cooled: TQ220

D/C: 05+

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RA13H1317M General Description

The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V_GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At V_GG=5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

RA13H1317M Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	RATING	UNIT
V_DD	Drain Voltage	V_GG<5V	17	V
V_GG	Gate Voltage	V_DD<12.5V, P_in=0mW	6	V
P_in	Input Power	f=135-175MHz, Z_G=Z_L=50	100	mW
P_out	Output Power	f=135-175MHz, Z_G=Z_L=50	20	W
T_case(OP)	Operation Case Temperature Range		-30 to +110
T_stg	Storage Temperature Range		-40 to +110

The above parameters are independently guaranteed.

RA13H1317M Features

• Enhancement-Mode MOSFET Transistors (I_DD0 @ V_DD=12.5V, V_GG=0V)
• P_out>13W,

>40% @ V_DD=12.5V, V_GG=5V, P_in=50mW
• Broadband Frequency Range: 135-175 MHz
• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

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