RA13H8891MA

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>13W, T>30% @ VDD=12.5V, VGG=5V, Pin=200mW
• Broadband Frequency Range: 889-915MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to 915-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors RA13H8891MA. Without the gate voltage (V_GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3.5V (typical) and 5V (maximum). At V_GG=5V, the typical gate current is 1 mA.
This module RA13H8891MA is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.