Features: • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)• Pout>13W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 330-400MHz• Low-Power Control Current IGG=1mA (typ) at VGG=5V• Module Size: 66 x 21 x 9.88 mm• Line...
RA13H3340M: Features: • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)• Pout>13W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 330-400MHz•...
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SpecificationsType of coolingair naturalProtection degreeIP00Type of connectionEN60146-1-1 N12 tab...
SpecificationsType of coolingair naturalProtection degreeIP00Type of connectionEN60146-1-1 N12 tab...
SYMBOL |
PARAMETER |
CONDITIONS |
RATING |
UNIT |
VDD |
Drain Voltage | VGG<5V |
17 |
V |
VGG |
Gate Voltage | VDD<12.5V, Pin=0W |
6 |
V |
Pin |
Input Power | f=806-870MHz, ZG=ZL=50 |
100 |
mW |
Pout |
Output Power |
20 |
W | |
Tcase(OP) |
Operation Case Temperature Range |
-30 to +90 |
°C | |
Tstg |
Storage Temperature Range |
-40 to +110 |
°C |
The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors RA13H3340M. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.
This module RA13H3340M is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.