RA13H1317M

• Enhancement-Mode MOSFET Transistors (I_DD0 @ V_DD=12.5V, V_GG=0V)
• P_out>13W, >40% @ V_DD=12.5V, V_GG=5V, P_in=50mW
• Broadband Frequency Range: 135-175 MHz
• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors RA13H1317M. Without the gate voltage (V_GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At V_GG=5V, the typical gate current is 1 mA.

This module RA13H1317M is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.