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The RA07N4452M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 440- to 520-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
RA07N4452M Maximum Ratings
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VDD
Drain Voltage
VGG<3.5V
12.5
V
VGG
Gate Voltage
VDD<9.6V, Pin=0mW
4
V
Pin
Input Power
f=440-520MHz, ZG=ZL=50
30
mW
Pout
Output Power
10
W
Tcase(OP)
Operation Case Temperature Range
-30 to +90
Tstg
Storage Temperature Range
-40 to +110
The above parameters are independently guaranteed.
RA07N4452M Features
• Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=9.6V, VGG=0V) • Pout>7.5W @ VDD=9.6V, VGG=3.5V, Pin=20mW • >43% @ Pout=7W (VGG control), VDD=9.6V, Pin=20mW • Broadband Frequency Range: 440-520MHz • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V • Module Size: 30 x 10 x 5.4 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
RA08H1317M General Description
The RA08H1317M is a 8-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 135- to 175-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
RA08H1317M Maximum Ratings
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VDD
Drain Voltage
VGG<3.5V
16
V
VGG
Gate Voltage
VDD<12.5V, Pin=0mW
4
V
Pin
Input Power
f=135-175MHz, ZG=ZL=50
40
mW
Pout
Output Power
10
W
Tcase(OP)
Operation Case Temperature Range
-30 to +90
Tstg
Storage Temperature Range
-40 to +110
The above parameters are independently guaranteed.
RA08H1317M Features
• Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) • Pout>6.5W @ VDD=7.2V, VGG=3.5V, Pin=20mW • >45% @ Pout=6W (VGG control), VDD=7.2V, Pin=20mW • Broadband Frequency Range: 135-175MHz • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V • Module Size: 30 x 10 x 5.4 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power