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RA0516RA, RA06H8285M, RA07H0608M

RA0516RA, RA06H8285M, RA07H0608M Selling Leads, Datasheet

MFG:SHARP  Package Cooled:TQ220  D/C:00+

RA0516RA, RA06H8285M, RA07H0608M Picture

RA0516RA, RA06H8285M, RA07H0608M Datasheet download

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Part Number: RA0516RA

 

MFG: SHARP

Package Cooled: TQ220

D/C: 00+

 

 

 
 
 
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About RA02M8087MD-101

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Datasheet: RA02M8087MD-101

File Size: 196999 KB

Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

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About RA06H8285M

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Datasheet: RA06H8285M

File Size: 245760 KB

Manufacturer: MITSUBISHI

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About RA07H0608M

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Datasheet: RA07H0608M

File Size: 65982 KB

Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

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RA07H0608M General Description

The RA07H0608M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 68- to 88-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

RA07H0608M Maximum Ratings

SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<3.5V 16 V
VGG Gate Voltage VDD<12.5V, Pin=0mW 6 V
Pin Input Power f=68-88MHz,
ZG=ZL=50
50 mW
Pout Output Power 10 W
Tcase(OP) Operation Case Temperature Range -30 to +90
Tstg Storage Temperature Range -40 to +110
The above parameters are independently guaranteed.

RA07H0608M Features

• Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)
• Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW
•  >38% @ Pout=7W (VGG control), VDD=12.5V, Pin=30mW
• Broadband Frequency Range: 68-88MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

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