DescriptionThe RA03M8087 is one member of the RA07M2127M family which is designed as the silicon MOSFET amplifier module device that can be used in non-linear FM modulation and linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the ...
RA03M8087: DescriptionThe RA03M8087 is one member of the RA07M2127M family which is designed as the silicon MOSFET amplifier module device that can be used in non-linear FM modulation and linear modulation by ...
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Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=7.2V, VGG=0V)• Pout>38d...
Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=7.2V, VGG=0V)• Pout>38d...
The RA03M8087 is one member of the RA07M2127M family which is designed as the silicon MOSFET amplifier module device that can be used in non-linear FM modulation and linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power applications.
The absolute maximum ratings of the RA03M8087 can be summarized as:(1)Drain Voltage: 9.2 V;(2)Gate Voltage: 4 V;(3)Input Power: 70 mW;(4)Output Power: 5 W;(5)Operation Case Temperature Range: -30 to +110 °C;(6)Storage Temperature Range: -40 to +110 °C.
The electrical characteristics of this device can be summarized as:(1)Frequency Range: 806 to 870 MHz;(2)Output Power: 3.6 W;(3)Total Efficiency: 32 %;(4)Input VSWR: 4:1;(5)Gate Current: 1 mA;(6)Stability: No parasitic oscillation;(7)Load VSWR Tolerance: No degradation or destroy. If you want to know more information about the RA03M8087, please download the datasheet in www.seekic.com or www.chinaicmart.com .