RA03M8087M

Features: • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V)• Pout>3.6W @ VDD=7.2V, VGG=3.5V, Pin=50mW• T>32% @ Pout=3W (VGG control), VDD=7.2V, Pin=50mW• Broadband Frequency Range: 806-870MHz• Low-Power Control Current IGG=1mA (typ) at VGG=3...

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SeekIC No. : 004469594 Detail

RA03M8087M: Features: • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V)• Pout>3.6W @ VDD=7.2V, VGG=3.5V, Pin=50mW• T>32% @ Pout=3W (VGG control), VDD=7.2V, Pin=50mW&...

floor Price/Ceiling Price

Part Number:
RA03M8087M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/19

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Product Details

Description



Features:

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V)
• Pout>3.6W @ VDD=7.2V, VGG=3.5V, Pin=50mW
• T>32% @ Pout=3W (VGG control), VDD=7.2V, Pin=50mW
• Broadband Frequency Range: 806-870MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.





Specifications

SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VDD
Drain Voltage VGG<3.5V
9.2
V
VGG
Gate Voltage VDD<7.2V, Pin=0mW
4
V
Pin
Input Power f=806-870MHz,
ZG=ZL=50
70
mW
Pout
Output Power
5
W
Tcase(OP)
Operation Case Temperature Range
-30 to +90
°C
Tstg
Storage Temperature Range
-40 to +110
°C
The above parameters are independently guaranteed




Description

The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806􀀁 to 870-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistorsRA03M8087M . Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA.

This module RA03M8087M is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.






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