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RA03M8087M, RA03M8894M, RA0465NAG-113

Table of contents:
Info of RA03M8087M
Info of RA03M8894M
Info of RA0465NAG-113

RA03M8087M, RA03M8894M, RA0465NAG-113 Selling Leads, Datasheet

MFG:MIT Package Cooled:NA D/C:08+

RA03M8087M, RA03M8894M, RA0465NAG-113 Picture

RA03M8087M, RA03M8894M, RA0465NAG-113 Datasheet download

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Part Number: RA03M8087M

MFG: MIT

Package Cooled: NA

D/C: 08+

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RA03M8087M General Description

The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806􀀁 to 870-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V_GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At V_GG=3.5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

RA03M8087M Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	RATING	UNIT
V_DD	Drain Voltage	V_GG<3.5V	9.2	V
V_GG	Gate Voltage	V_DD<7.2V, Pin=0mW	4	V
P_in	Input Power	f=806-870MHz, ZG=ZL=50	70	mW
P_out	Output Power	f=806-870MHz, ZG=ZL=50	5	W
T_case(OP)	Operation Case Temperature Range		-30 to +90	°C
T_stg	Storage Temperature Range		-40 to +110	°C

The above parameters are independently guaranteed

RA03M8087M Features

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V)
• Pout>3.6W @ VDD=7.2V, VGG=3.5V, Pin=50mW
• T>32% @ Pout=3W (VGG control), VDD=7.2V, Pin=50mW
• Broadband Frequency Range: 806-870MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.

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