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RA07M3340M, RA07M3340M-01, RA07M3843M

Table of contents:
Info of RA07M3340M
Info of RA07M3340M-01
Info of RA07M3843M

RA07M3340M, RA07M3340M-01, RA07M3843M Selling Leads, Datasheet

MFG:MITSUBISHI D/C:05+

RA07M3340M, RA07M3340M-01, RA07M3843M Picture

RA07M3340M, RA07M3340M-01, RA07M3843M Datasheet download

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Part Number: RA07M3340M

MFG: MITSUBISHI

Package Cooled:

D/C: 05+

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RA07M3340M General Description

The RA07M3340M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 330- to 400-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V_GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At V_GG=3.5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

RA07M3340M Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	RATING	UNIT
V_DD	Drain Voltage	V_GG<3.5V	9.2	V
V_GG	Gate Voltage	V_DD<7.2V, P_in=0mW	4	V
P_in	Input Power	f=330-400MHz, Z_G=Z_L=50	70	mW
P_out	Output Power	f=330-400MHz, Z_G=Z_L=50	10	W
T_case(OP)	Operation Case Temperature Range		-30 to +90
T_stg	Storage Temperature Range		-40 to +11

The above parameters are independently guaranteed.

RA07M3340M Features

Enhancement-Mode MOSFET Transistors (I_DD0 @ V_DD=7.2V, V_GG=0V)
• P_out>7W @ V_DD=7.2V, V_GG=3.5V, P_in=50mW
•

>40% @ P_out=6.5W (V_GG control), V_DD=7.2V, P_in=50mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current I_GG=1mA (typ) at V_GG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

RA07M3843M General Description

The RA07M3843M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 378- to 430-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V_GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At V_GG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

RA07M3843M Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	RATING	UNIT
V_DD	Drain Voltage	V_GG=0V, P_in=0W	12	V
V_DD	Drain Voltage	V_GG<5V	9.2	V
V_GG	Gate Voltage	V_DD<7.2V, P_in=0W	4	V
I_DD	Total Current		3.5	A
P_in	Input Power	f=806-870MHz, Z_G=Z_L=50	70	mW
P_out	Output Power	f=806-870MHz, Z_G=Z_L=50	10	W
T_case(OP)	Operation Case Temperature Range		-30 to +90	°C
T_stg	Storage Temperature Range		-40 to +110	°C

The above parameters are independently guaranteed

RA07M3843M Features

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V)
• Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW
• T>40% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=50mW
• Broadband Frequency Range: 378-430MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

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