MFG:International Rectifier Category:Relays Package Cooled:IPM D/C:MODULE
PVD150-12, PVD2172, PVD2352 Datasheet download
Category: Relays
MFG: International Rectifier
Package Cooled: IPM
D/C: MODULE
Description: IC RELAY 200V 220MA 8-DIP
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PDF/DataSheet Download
Datasheet: PVD150-12
File Size: 67595 KB
Manufacturer: NIEC [Nihon Inter Electronics Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PVD10
File Size: 81612 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PVD2352
File Size: 310731 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
|
Item |
Symbol |
Rated Value |
Unit | ||
|
3 Phase Rectification Diode |
Repetitive Peak Reverse Voltage |
VRRM |
1600 |
V | |
|
Non-Repetitive Peak Reverse Voltage |
VRSM |
1700 | |||
|
Average Rectified Out Put Current |
IO(AV) |
75 |
A | ||
|
Surge Forward Current |
IFSM |
440 | |||
|
I Squared t |
I2t |
968 |
A2s | ||
|
Critical Rate of Fall of Forward Current |
-di/dt |
200(@ :IFM=250A, VR=1000V) |
A/µs | ||
|
Switch Thyristor |
Repetitive Peak Off-State Voltage |
VDRM |
1600 |
V | |
|
Non-Repetitive Peak Off-State Voltage |
VRSM |
1700 | |||
|
Average Rectified Out-Put Current |
IO(AV) |
75 |
A | ||
|
Surge Forward Current |
ITSM |
440 | |||
|
I Squared t |
I2t |
968 |
A2s | ||
|
Critical Rate Of Rise Of Turn-On Current |
di/dt |
100 |
A/µs | ||
|
Peak Gate Power |
PGM |
5 |
W | ||
|
Average Gate Power |
PGM(AV) |
1 | |||
|
Peak Gate Current |
IGM |
2 |
A | ||
|
Peak Gate Voltage |
VGM |
10 |
V | ||
|
Peak Gate Reverse Voltage |
VRGM |
5 | |||
|
Inverter IGBT |
Collector-Emitter Voltage |
VCES |
1200 |
V | |
|
Gate-Emitter Voltage |
VGES |
+/- 20V | |||
|
Collector Current |
DC |
IC |
75 |
A | |
|
1ms |
ICP |
150 | |||
|
DC |
IF |
75 | |||
|
Forward Current |
1ms |
IFM |
150 | ||
|
Collector Power Dissipation |
PC |
438 |
W | ||
|
Brake IGBT |
Collector-Emitter Voltage |
VCES |
1200 |
V | |
|
Gate Emitter Voltage |
VGES |
+/- 20V | |||
|
Collector Current |
DC |
IC |
50 |
A | |
|
1ms |
ICP |
100 | |||
|
Collector Power Dissipation |
PC |
312 |
W | ||
|
Snubber Diode |
Repetitive Peak Reverse Voltage |
VRRM |
1200 |
V | |
|
Forward Current, DC |
IF |
15 |
A | ||
|
Surge Forward Current |
IFSM |
70 | |||
|
Operating Junction Temperature Range |
Tjw |
-40 to +150°C(notes:+125 °C > Can not be biased.) |
|||
|
Storage Temperature Range |
Tstg |
-40 to +125°C | |||
|
Isolation Voltage(Terminal to Base) |
Viso |
2500(@AC, 1minute), 3000(@AC, 1second) |
V | ||
|
Isolation Resistance(Terminal to Base, @DC=500V) |
Riso |
500 |
M.ohm | ||
|
Mounting Torque(Module Base to Heatsink) |
Ftor |
(M4), 1.4 |
N`m | ||
| Technical/Catalog Information | PVD2352 |
| Vendor | International Rectifier |
| Category | Relays |
| Mounting Type | Through Hole |
| Termination Style | PC Pin |
| Package / Case | 8-DIP (300 mil, 4 Leads) |
| Circuit | SPST-NO (1 Form A) |
| Load Current | 220mA |
| Voltage - Input | 1.2VDC |
| Voltage - Load | 0 ~ 200 V |
| Output Type | DC |
| On-State Resistance | 6 Ohm |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | PVD2352 PVD2352 |
The Photovoltaic DC Relay (PVD) is a single-pole, normally open solid state replacement for electro-mechanical relays used for general purpose switching of analog signals. It utilizes as an output switch a unique bidirectional (AC or DC) MOSFET power IC termed a BOSFET. The BOSFET is controlled by a photovoltaic generator of novel construction, which is energized by radiation from a dielectrically isolated light emitting diode (LED).
The PVD overcomes the limitations of both conventional and reed electromechanical relays by offering the solid state advantages of long life, high operating speed, low pick-up power, bounce-free operation, low thermal voltages and miniaturization. These advantages allow product improvement and design innovations in many applications such as process control, multiplexing, telecommunications, automatic test equipment and data acquisition.
The PVD can switch analog signals from thermocouple level to 300 volts peak DC. Signal frequencies into the RF range are easily controlled and switching rates up to 6kHz are achievable. The extremely small thermally generated offset voltages allow increased measurement accuracies.
Unique silicon technology developed by International Rectifier forms the heart of the PVD. The monolithic BOSFET contains a bidirectional N-channel power MOSFET output structure. In addition, this power IC chip has input circuitry for fast turn-off and gate protection functions. This section of the BOSFET chip utilizes both bipolar and MOS technology to form NPN transistors, P-channel MOSFETs, resistors, diodes and capacitors. The photovoltaic generator similarly utilizes a unique International Rectifier alloyed multijunction structure.
The excellent current conversion efficiency of this technique results in the very fast response of the PVD microelectronic power IC relay.
This advanced semiconductor technology has created a radically new control device. Designers can now develop switching systems to new standards of electrical performance and mechanical compactness.
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