Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 11kw 200V Inverter
PVD1352 Parameters
Technical/Catalog Information
PVD1352
Vendor
International Rectifier
Category
Relays
Mounting Type
Through Hole
Termination Style
PC Pin
Package / Case
8-DIP (300 mil, 4 Leads)
Circuit
SPST-NO (1 Form A)
Load Current
500mA
Voltage - Input
1.2VDC
Voltage - Load
0 ~ 100 V
Output Type
DC
On-State Resistance
1.5 Ohm
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
PVD1352 PVD1352
PVD1352 General Description
The Photovoltaic DC Relay (PVD) is a single-pole, normally open solid state replacement for electromechanical relays used for general purpose switching of analog signals. It utilizes as an output switch a unique bidirectional (AC or DC) MOSFET power IC termed a BOSFET. The BOSFET is controlled by a photovoltaic generator of novel construction, which is energized by radiation from a dielectrically isolated light emitting diode (LED).
The PVD overcomes the limitations of both conventional and reed electromechanical relays by offering the solid state advantages of long life, high operating speed, low pick-up power, bounce-free operation, low thermal voltages and miniaturization. These advantages allow product improvement and design innovations in many applications such as process control, multiplexing, telecommunications, automatic test equipment and data acquisition.
The PVD can switch analog signals from thermocouple level to 100 volts peak DC. Signal frequencies into the RF range are easily controlled and switching rates up to 2kHz are achievable. The extremely small thermally generated offset voltages allow increased measurement accuracies.
Unique silicon technology developed by International Rectifier forms the heart of the PVD. The monolithic BOSFET contains a bidirectional N-channel power MOSFET output structure. In addition, this power IC chip has input circuitry for fast turn-off and gate protection functions. This section of the BOSFET chip utilizes both bipolar and MOS technology to form NPN transistors, P-channel MOSFETs, resistors, diodes and capacitors.
The photovoltaic generator similarly utilizes a unique International Rectifier alloyed multijunction structure. The excellent current conversion efficiency of this technique results in the very fast response of the PVD microelectronic power IC relay.
This advanced semiconductor technology has created a radically new control device. Designers can now develop switching systems to new standards of electrical performance and mechanical compactness.
PVD1352 Features
`BOSFET Power IC `1010 Operations `300sec Operating Time `3 milliwatts Pick-Up Power `1000V/sec dv/dt `8-pin DIP Package `-40°C to 85°C `UL recognized