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PVD110-6

Features: Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 11kw 200V InverterSpecifications Item Symbol Rated Value Unit 3 PhaseRectificationDiode Repetitive Peak Reverse Voltage VRRM 800 V Non-Repetitive Peak Reverse Volta...

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PVD110-6: Features: Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 11kw 200V InverterSpecifications Item Symbol Rated Value Unit 3 PhaseRectificatio...

PVD110-6 Data Sheet

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Part Number:
PVD110-6
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
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Upload time: 2024/12/21

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Product Details

Description



Features:

Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 11kw 200V Inverter


Specifications

Item
Symbol
Rated Value
Unit
3 Phase
Rectification
Diode
Repetitive Peak Reverse Voltage
VRRM
800
V
Non-Repetitive Peak Reverse Voltage
VRSM
900
Average Rectified Out Put Current
IO(AV)
100
A
Surge Forward Current
IFSM
900
I Squared t
I2t
4050
A2s
Critical Rate of Fall of Forward Current
-di/dt
160(@ :IFM=60A, VR=500V))
A/µs
Switch
Thyristor
Repetitive Peak Off-State Voltage
VDRM
800
V
Non-Repetitive Peak Off-State Voltage
VRSM
900
Average Rectified Out-Put Current
IO(AV)
100
A
Surge Forward Current
ITSM
1000
I Squared t
I2t
5000
A2s
Critical Rate Of Rise Of Turn-On Current
di/dt
100
A/µs
Peak Gate Power
PGM
5
W
Average Gate Power
PGM(AV)
1
Peak Gate Current
IGM
2
A
Peak Gate Voltage
VGM
10
V
Peak Gate Reverse Voltage
VRGM
5
Inverter
IGBT
Collector-Emitter Voltage
VCES
600
V
Gate-Emitter Voltage
VGES
+/- 20V
Collector Current
DC
IC
100
A
1ms
ICP
200
DC
IF
100
Forward Current
1ms
IFM
200
Collector Power Dissipation
PC
390
W
Brake
IGBT
Collector-Emitter Voltage
VCES
600
V
Gate Emitter Voltage
VGES
+/- 20V
Collector Current
DC
IC
50
A
1ms
ICP
100
Collector Power Dissipation
PC
215
W
Snubber
Diode
Repetitive Peak Reverse Voltage
VRRM
600
V
Forward Current, DC
IF
15
A
Surge Forward Current
IFSM
150
Operating Junction Temperature Range
Tjw
-40 to +150°C(notes:+125 °C > Can not be biased.)
Storage Temperature Range
Tstg
-40 to +125°C
Isolation Voltage(Terminal to Base)
Viso
2500(@AC, 1minute), 3000(@AC, 1second)
V
Isolation Resistance(Terminal to Base, @DC=500V)
Riso
500
M.ohm
Mounting Torque(Module Base to Heatsink)
Ftor
(M4), 1.4
N`m



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