Features: Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 11kw 200V InverterSpecifications Item Symbol Rated Value Unit 3 PhaseRectificationDiode Repetitive Peak Reverse Voltage VRRM 800 V Non-Repetitive Peak Reverse Volta...
PVD110-6: Features: Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 11kw 200V InverterSpecifications Item Symbol Rated Value Unit 3 PhaseRectificatio...
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Item |
Symbol |
Rated Value |
Unit | ||
3 Phase Rectification Diode |
Repetitive Peak Reverse Voltage |
VRRM |
800 |
V | |
Non-Repetitive Peak Reverse Voltage |
VRSM |
900 | |||
Average Rectified Out Put Current |
IO(AV) |
100 |
A | ||
Surge Forward Current |
IFSM |
900 | |||
I Squared t |
I2t |
4050 |
A2s | ||
Critical Rate of Fall of Forward Current |
-di/dt |
160(@ :IFM=60A, VR=500V)) |
A/µs | ||
Switch Thyristor |
Repetitive Peak Off-State Voltage |
VDRM |
800 |
V | |
Non-Repetitive Peak Off-State Voltage |
VRSM |
900 | |||
Average Rectified Out-Put Current |
IO(AV) |
100 |
A | ||
Surge Forward Current |
ITSM |
1000 | |||
I Squared t |
I2t |
5000 |
A2s | ||
Critical Rate Of Rise Of Turn-On Current |
di/dt |
100 |
A/µs | ||
Peak Gate Power |
PGM |
5 |
W | ||
Average Gate Power |
PGM(AV) |
1 | |||
Peak Gate Current |
IGM |
2 |
A | ||
Peak Gate Voltage |
VGM |
10 |
V | ||
Peak Gate Reverse Voltage |
VRGM |
5 | |||
Inverter IGBT |
Collector-Emitter Voltage |
VCES |
600 |
V | |
Gate-Emitter Voltage |
VGES |
+/- 20V | |||
Collector Current |
DC |
IC |
100 |
A | |
1ms |
ICP |
200 | |||
DC |
IF |
100 | |||
Forward Current |
1ms |
IFM |
200 | ||
Collector Power Dissipation |
PC |
390 |
W | ||
Brake IGBT |
Collector-Emitter Voltage |
VCES |
600 |
V | |
Gate Emitter Voltage |
VGES |
+/- 20V | |||
Collector Current |
DC |
IC |
50 |
A | |
1ms |
ICP |
100 | |||
Collector Power Dissipation |
PC |
215 |
W | ||
Snubber Diode |
Repetitive Peak Reverse Voltage |
VRRM |
600 |
V | |
Forward Current, DC |
IF |
15 |
A | ||
Surge Forward Current |
IFSM |
150 | |||
Operating Junction Temperature Range |
Tjw |
-40 to +150°C(notes:+125 °C > Can not be biased.) |
|||
Storage Temperature Range |
Tstg |
-40 to +125°C | |||
Isolation Voltage(Terminal to Base) |
Viso |
2500(@AC, 1minute), 3000(@AC, 1second) |
V | ||
Isolation Resistance(Terminal to Base, @DC=500V) |
Riso |
500 |
M.ohm | ||
Mounting Torque(Module Base to Heatsink) |
Ftor |
(M4), 1.4 |
N`m |