PHP125T/R, PHP12N50E, PHP12NQ15T_1 Selling Leads, Datasheet
PHP125T/R, PHP12N50E, PHP12NQ15T_1 Datasheet download
Part Number: PHP125T/R
MFG: --
Package Cooled:
D/C:
PHP125T/R, PHP12N50E, PHP12NQ15T_1
- Table of contents:
Info of PHP125T/R
Info of PHP12N50E
Info of PHP12NQ15T_1
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About PHP125T/R
PDF/DataSheet Download
Datasheet: PHP125T/R
File Size: 333896 KB
Manufacturer:
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About PHP12N50E
PDF/DataSheet Download
Datasheet: PHP12N50E
File Size: 380346 KB
Manufacturer:
Download : Click here to Download
About PHP101NQ03LT
PDF/DataSheet Download
Datasheet: PHP101NQ03LT
File Size: 285725 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHP12N50E General Description
N-channel enchancement mode field-effect power transistor in a plastic envelope using"trench" technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.It has five unique features: the first one is repetitive avalance rated. The second one is low thermal resistance. The third one is fast switching. The forth one is stable off-state charactersitics. The fifth one is high thermal cycling performance.
There are some limiting values(limiting values in accordance with the absolute maximum system).Drain-source voltage(VDSS) is 500 V max when Tj is 25 to 175.Drain-gate voltage(VDGR) is 500 V when Tj is 25 to 150,RGS is 20 k. Gate-source voltage is ±30 V. Continuous drian current(DC)(ID) is 11.6 A max when Tmb is 25 and VGS is 10 V.Drain current(pulse peak value)(IDM) is 46 A when Tmb is 25.Total dissipation(PD) is 167 W max. Junction temperature(Tj) is -55 to 150.Otherwise, there are also some thermal resistances about it.Thermal resistance junction to mounting base is 0.75 k/W max. Thermal resistance junction to ambient is 60 K/W typ .Electrical characteristics: Drain-source breakdwon voltage(V(BR)DSS) is 500 V min when VGS is 0V, ID is 0.25 mA. Gate threshold voltage (VGS(TO) ) is 2.0 Vmin,3.0 V typ and 4.0 V max when VDS is VGS, ID is 0.25 mA. Drain-source leakage current(IDSS) is 1uA typ and 25 uA max when VDS is 500 V , VGS is 0 V.Gate-source leakage current(IGSS) is 10 nA typ and 200 nA max when VGS is ±30 V,VDS is 0 V.Drain-source on-state resistance(RDS(ON) ) is 0.47 typ and 0.52 max when VGS is 10 V , ID is 5.5 A. Total gate charge is 75 nC typ and 100 nC max when VDD is 400 V , VGS is 10 V,ID is 11 A .Gate to source charge is 7 nC typ and 12 nC max when VDD is 400 V , VGS is 10 V,ID is 11 A .
Well, this is a simple introduction to this type of product, if you want to know more about it, please pay more attention to our web. Thanks for your attention!
PHP12N50E Maximum Ratings
PHP12N50E Features
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